k4h560838c Samsung Semiconductor, Inc., k4h560838c Datasheet - Page 49

• Manufacturer Part Number: k4h560838c
• Description: Ddr Sdram Specification Version 0.6
• Manufacturer: Samsung Semiconductor, Inc.

256Mb C-die(x4/8) DDR SDRAM
9. AC Operating Test Conditions
10. Input/Output Capacitance
(V
(V
Input reference voltage for Clock
Input signal maximum peak swing
Input signal minimum slew rate (for imput only)
Input slew rate (I/O pins)
Input Levels(V
Input timing measurement reference level
Output timing measurement reference level
Output load condition
Input capacitance
(A
CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output
Input capacitance(DM)
capacitance
DD
DD
0
~ A
=2.5, V
=2.5V, V
11
Parameter
, BA
DDQ
DDQ
0
IH
~ BA
=2.5V, T
/V
=2.5V, T
IL
)
Parameter
1,
A
= 25
A
= 0 to 70 C )
Output
Symbol
C
C
, f=1MHz)
C
C
C
Figure 26. Output Load Circuit (SSTL_2)
OUT
IN1
IN2
IN3
Table 17. AC operating test conditions
Table 18. Input/output capacitance
Min
4.0
4.0
2
2
Z0=50
C
LOAD
- 49 -
Max
3.0
3.0
5.0
5.0
=30pF
V
tt
=0.5*V
Delta Cap(max)
V
R
REF
DDQ
T
See Load Circuit
=50
+0.31/V
0.5 * V
0.25
V
=0.5*V
0.5
0.5
REF
Value
V
1.5
0.5
0.5
V
REF
tt
DDQ
DDQ
REF
-0.31
REV. 0.7 Jan. 31. 2002
Unit
pF
pF
pF
pF
Unit
V/ns
V/ns
V
V
V
V
V
Note