r1wv6416r Renesas Electronics Corporation., r1wv6416r Datasheet
r1wv6416r
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r1wv6416r Summary of contents
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... The R1WV6416R Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1WV6416R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with pin pitch of 0.5mm], 52-pin micro thin small outline package [ of 0 ...
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... R1WV6416R Series Pin Arrangement A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 9 CS1 52-pin μTSOP (II Vcc 14 CS2 15 A21 16 A20 17 A18 18 A17 A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 ...
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... R1WV6416R Series Pin Description Pin name Vcc Power supply Vss Ground A0 to A21 Address input (word mode) A-1 to A21 Address input (byte mode) DQ0 to DQ15 Data input/output CS1# Chip select 1 CS2 Chip select 2 WE# Write enable OE# Output enable LB# Lower byte enable UB# ...
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... R1WV6416R Series Block Diagram ADDRESS BUFFER DECODER A 21 CS2 CS1# LB# UB# BYTE# WE# OE# Note: BYTE# pin is supported for 48-pin TSOP (I) and 52-pin µTSOP (II) packages. REJ03C0368-0001, Rev.0.01, 2008.03.24 Page MEMORY ARRAY 2M-word x16-bit ROW or 4M-word x 8-bit SENSE / WRITE AMPLIFIER ...
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... R1WV6416R Series Operation Table CS1# CS2 BYTE# LB Note1 L BYTE# pin is supported for 48-pin TSOP (I) and 52-pin µTSOP (II) packages. ...
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... R1WV6416R Series Recommended Operating Conditions Parameter Supply voltage Input high voltage Input low voltage R ver. Ambient temperature range I ver. Note 1. –2.0V in case of AC (Pulse width ≤ 30ns) 2. Ambient temperature range depends on R/I-version. Please see table on page 1. DC Characteristics Parameter Symbol Input leakage current ...
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... R1WV6416R Series Capacitance Parameter Symbol Input capacitance C in Input / output capacitance C Note1.This parameter is sampled and not 100% tested. AC Characteristics Test Conditions (Vcc = 2.7V ~ 3.6V +70°C / -40 ~ +85°C • Input pulse levels 0.4V • Input rise and fall time: 5ns • Input and output timing reference level: 1.4V • ...
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... R1WV6416R Series Read Cycle Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB#, UB# access time Chip select to output in low-Z LB#, UB# enable to low-Z Output enable to output in low-Z Chip deselect to output in high-Z ...
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... R1WV6416R Series Write Cycle Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width LB#, UB# valid to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Output enable from end of write ...
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... R1WV6416R Series BYTE# Timing Conditions Parameter Byte setup time Byte recovery time BYTE# Timing Waveforms CS1# CS2 BYTE# REJ03C0368-0001, Rev.0.01, 2008.03.24 Page R1WV6416R**-5S R1WV6416R**-7S Symbol Min. Max. Min Preliminary Unit Note Max ...
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... R1WV6416R Series Timing Waveforms *1 Read Cycle A 0~21 (Word Mode) A -1~21 (Byte Mode) LB#,UB# CS1# CS2 V WE# IH WE# = “H” level V IL OE# DQ High impedance 0~15 (Word Mode) DQ 0~7 (Byte Mode) Note1. BYTE# ≥ Vcc – 0.2V or BYTE# ≤ 0.2V REJ03C0368-0001, Rev.0.01, 2008.03.24 Page ...
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... R1WV6416R Series *1 Write Cycle (1) (WE# CLOCK) A 0~21 (Word Mode) A -1~21 (Byte Mode) LB#,UB# CS1# CS2 WE# OE# DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Note1. BYTE# ≥ Vcc – 0.2V or BYTE# ≤ 0.2V REJ03C0368-0001, Rev.0.01, 2008.03.24 Page WHZ t t OHZ ...
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... R1WV6416R Series *1 Write Cycle (2) (CS1#, CS2 CLOCK) A 0~21 (Word Mode) A -1~21 (Byte Mode) LB#,UB# CS1# CS2 WE OE# OE# = “H” level 0~15 (Word Mode) DQ 0~7 (Byte Mode) Note1. BYTE# ≥ Vcc – 0.2V or BYTE# ≤ 0.2V REJ03C0368-0001, Rev.0.01, 2008.03.24 Page ...
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... R1WV6416R Series *1 Write Cycle (3) (LB#, UB# CLOCK) A 0~21 (Word Mode) A -1~21 (Byte Mode) LB#,UB# CS1# CS2 WE OE# OE# = “H” level 0~15 (Word Mode) DQ 0~7 (Byte Mode) Note1. BYTE# ≥ Vcc – 0.2V or BYTE# ≤ 0.2V REJ03C0368-0001, Rev.0.01, 2008.03.24 Page ...
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... R1WV6416R Series Low Vcc Data Retention Characteristics Parameter Symbol V for data retention CC Data retention current Chip select to data retention time Operation recovery time Note 1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 25ºC), and not 100% tested. 2. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 40ºC), and not 100% tested. ...
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... R1WV6416R Series Low Vcc Data Retention Timing Waveforms (1) CS1# Controlled Vcc 2.2V CS1# (2) CS2 Controlled Vcc CS2 0.6V (3) LB#, UB# Controlled Vcc 2.2V LB#, UB# Note1. BYTE# ≥ Vcc – 0.2V or BYTE# ≤ 0.2V REJ03C0368-0001, Rev.0.01, 2008.03.24 Page 2.7V 2.7V t CDR V DR CS1# ≥ Vcc - 0.2V 2.7V 2.7V t CDR ≤ CS2 ≤ 0.2V 2 ...
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... Revision History Rev. Date Page 0.01 Mar.24, 2008 - Contents pf Revision Initial issue: Preliminary Data Sheet R1WV6416R Data Sheet Description ...
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Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...