m464s1724kus Samsung Semiconductor, Inc., m464s1724kus Datasheet - Page 8
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m464s1724kus
Manufacturer Part Number
m464s1724kus
Description
Sdram Unbuffered Sodimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M464S1724KUS.pdf
(13 pages)
8.0 Absolute Maximum Ratings
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
9.0 DC Operating Conditions And Characteristics
Recommended operating conditions (Voltage referenced to V
Note :
1. V
2. V
3. Any input 0V ≤ V
10.0 Capacitance(Max.)
128MB Unbuffered SODIMM
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
IH
IL
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
Parameter
DD
Parameter
supply relative to V
Parameter
IN
0
≤ V
~ A
DDQ
11
, BA0 ~ BA1)
. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
SS
SS
Symbol
V
V
V
V
V
I
OH
DD
OL
LI
IH
IL
Symbol
C
C
C
C
C
C
C
V
OUT
V
IN1
IN2
IN3
IN4
IN5
IN6
Symbol
DD
IN
Min
-0.3
3.0
2.0
2.4
-10
T
, V
I
-
, V
P
STG
OS
D
OUT
DDQ
SS
= 0V, T
8 of 13
A
Typ
3.3
3.0
= 0 to 70°C)
0
-
-
-
Min
25
25
15
15
15
10
10
(V
DD
= 3.3V, T
1.0 * # of component
M464S1724KUS
V
DDQ
Max
-55 ~ +150
3.6
0.8
0.4
-1.0 ~ 4.6
-1.0 ~ 4.6
10
-
Value
+0.3
A
50
= 23°C, f = 1MHz, V
Rev. 1.2 August 2008
Unit
Max
uA
V
V
V
V
V
45
45
25
21
25
12
12
REF
= 1.4V ± 200 mV)
I
OH
I
OL
Unit
SDRAM
mA
°C
W
Note
V
V
= -2mA
= 2mA
1
2
3
Unit
pF
pF
pF
pF
pF
pF
pF