m464s1724kus Samsung Semiconductor, Inc., m464s1724kus Datasheet - Page 9
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m464s1724kus
Manufacturer Part Number
m464s1724kus
Description
Sdram Unbuffered Sodimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M464S1724KUS.pdf
(13 pages)
11.0 DC CHARACTERISTICS
11.1 M464S1724KUS (16M x 64, 128MB Module)
128MB Unbuffered SODIMM
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1, tRC ≥ tRC(min), IO = 0 mA
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
IO = 0 mA,
Page burst 4Banks activated tCCD = 2CLKs
tRC ≥ tRC(min)
CKE ≤ 0.2V
IL
IH
IH
IL
IH
IH
(max), tCC = 10ns
(max), tCC = 10ns
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
(Recommended operating condition unless otherwise noted, T
IL
IL
Test Condition
(max), tCC =∞
(max), tCC =∞
9 of 13
IH
IH
IL
IL
(min), tCC = 10ns
(min), tCC = 10ns
(max), tCC =∞
(max), tCC =∞
C
L
Rev. 1.2 August 2008
Version
520
160
240
200
680
920
6.4
7A
16
16
80
40
40
16
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
SDRAM
A
= 0 to 70°C)
Note
1
1
2