m464s6453cks Samsung Semiconductor, Inc., m464s6453cks Datasheet - Page 2

• Manufacturer Part Number: m464s6453cks
• Description: Pc133/pc100 Sodimm
• Manufacturer: Samsung Semiconductor, Inc.

PIN CONFIGURATIONS (Front side/back side)
M464S6453CKS SDRAM SODIMM
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
Dynamic RAM high density memory module. The Samsung
M464S6453CKS consists of eight CMOS 64M x 8 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy
substrate. Three 0.1uF decoupling capacitors are mounted on
the printed circuit board in parallel for each SDRAM. The
M464S6453CKS is a Small Outline Dual In-line Memory Module
and is intended for mounting into 144-pin M46S6453CKS edge
connector sockets.
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth,
high performance memory system applications.
M464S6453CKS
Synchronous design allows precise cycle control with the use of
Pin Front
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
The Samsung M464S6453CKS is a 64M bit x 64 Synchronous
1
3
5
7
9
DQM0
DQM1
DQ10
DQ11
DQ12
DQ13
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
V
V
V
V
V
V
A0
A1
A2
D D
D D
D D
SS
SS
SS
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Pin
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
2
4
6
8
DQM4
DQM5
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
Back
V
V
V
V
V
V
A3
A4
A5
SS
DD
SS
DD
SS
DD
Pin
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
Voltage Key
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
Front Pin Back Pin
CLK0
RAS
CS0
CS1
V
V
V
V
V
WE
NC
NC
DU
NC
NC
D D
D D
SS
SS
SS
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
DQ46
DQ47
CKE0
CKE1
CLK1
DQ48
DQ49
DQ50
DQ51
DQ52
*A13
CAS
V
V
A12
V
V
V
NC
NC
NC
NC
DD
DD
SS
SS
SS
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
95
97
99
A10/AP
DQM2
DQM3
**SDA
Front
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
V
V
V
V
V
V
V
A6
A8
A9
DD
DD
DD
DD
SS
SS
SS
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Pin Back
96
98
• Performance range
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V 0.3V power supply
• MRS cycle with address key programs
• All inputs are sampled at the positive going edge of the
• Serial presence detect with EEPROM
• PCB : Height (1,200mil), double sided component
FEATURE
DQM6
DQM7
**SCL
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
M464S6453CKS-L1H/C1H
M464S6453CKS-L7A/C7A
Latency (Access from column address)
Data scramble (Sequential & Interleave)
V
BA0
BA1
A11
V
V
V
M464S6453CKS-L1L/C1L
Burst length (1, 2, 4, 8 & Full page)
system clock
V
V
V
A7
DD
SS
DD
SS
DD
SS
DD
Part No.
PIN NAMES
*
** These pins should be NC in the system
A0 ~ A12
BA0 ~ BA1
DQ0 ~ DQ63
CLK0 ~ CLK1
CKE0 ~ CKE1 Clock enable input
CS0 ~ CS1
RAS
CAS
WE
DQM0 ~ 7
V
V
SDA
SCL
DU
NC
D D
SS
Pin Name
These pins are not used in this module.
which does not support SPD.
PC133/PC100 SODIMM
Rev. 0.1 Feb. 2002
Address input (Multiplexed)
Select bank
Data input/output
Clock input
Chip select input
Row address strobe
Column address strobe
Write enable
DQM
Power supply (3.3V)
Ground
Serial data I/O
Serial clock
Don t use
No connection
100MHz (10ns @ CL=2)
100MHz (10ns @ CL=3)
133MHz(7.5ns @CL=3)
Max Freq. (Speed)
Function