hys64t32000hm-5-a Infineon Technologies Corporation, hys64t32000hm-5-a Datasheet - Page 33

• Manufacturer Part Number: hys64t32000hm-5-a
• Description: 240-pin Registered Ddr2 Sdram Modules
• Manufacturer: Infineon Technologies Corporation

3.4.1
For testing the
Table 23
Parameter
CAS Latency
Clock Cycle Time
Active to Read or Write delay
Active to Active / Auto-Refresh
command period
Active bank A to Active bank B
command delay
Active to Precharge Command
Precharge Command Period
Auto-Refresh to Active / Auto-
Refresh command period
Average periodic Refresh interval
1)
2)
Data Sheet
4 & 8 (1 KByte page size)
16 (2 KByte page size); not on 256M component
I
I
DD
DD
I
DD
Measurement Test Condition for DDR2–667D, DDR2–533C and DDR2–400B
Test Conditions
parameters, the timing parameters as in
Symbol
CL
t
t
t
t
t
t
t
t
t
CKIDD
RCD.IDD
RC.IDD
RRD.IDD
RAS.MIN.IDD
RAS.MAX.IDD
RP.IDD
RFC.IDD
REFI
IDD
–3S
DDR2–667D
5
3.75
15
60
7.5
10
45
70000
15
105
7.8
33
Table 23
HYS64T[32/64]0[0/2]0HM–[3S/3.7/5]–A
–3.7
DDR2–533C
4
3.75
15
60
7.5
10
45
70000
15
105
7.8
Micro-DIMM DDR2 SDRAM Modules
are used.
–5
DDR2–400B
3
5
15
55
7.5
10
40
70000
15
105
7.8
Electrical Characteristics
03242004-2CBE-IJ2X
Rev. 1.1, 2005-10
Unit
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
s
Notes
1)
2)