m366s3323dts Samsung Semiconductor, Inc., m366s3323dts Datasheet - Page 5

• Manufacturer Part Number: m366s3323dts
• Description: 32mx64 Sdram Dimm Based On 16mx8, 4banks, 4k Refresh, 3.3v Synchronous Drams With Spd
• Manufacturer: Samsung Semiconductor, Inc.

Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
M366S3323DTS
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
= 10ns
= 10ns
A
V
V
= 0 to 70 C)
V
V
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
PC133/PC100 Unbuffered DIMM
CC
CC
= 10ns
= 10ns
/V
=
=
SSQ
)
C
L
1040
1120
2000
- 7C
1120
1840
-7A
960
Version
Rev. 0.1 Sept. 2001
12.8
320
160
480
400
32
32
80
80
32
1040
1760
-1H
960
1040
1760
960
-1L
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
1
2