k9f4g08u0m-y Samsung Semiconductor, Inc., k9f4g08u0m-y Datasheet - Page 19

• Manufacturer Part Number: k9f4g08u0m-y
• Description: 512m X 8 Bits / 1g X 8 Bits Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9K8G08U1M
K9F4G08U0M
Input Data Latch Cycle
ALE
CLE
CE
WE
I/Ox
CE
RE
R/B
I/Ox
* Serial Access Cycle after Read
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
NOTES : Transition is measured 200mV from steady state voltage with load.
t
RR
t
t
ALS
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
WP
t
DS
DIN 0
t
WC
t
REA
t
DH
t
WH
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
Dout
(CLE=L, WE=H, ALE=L)
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
19
t
DH
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
NOTES : DIN final means 2,112
Dout
t
RHZ
t
DIN final*
WP
t
DS
t
DH
t
CH
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
t
CLH
t
REA
FLASH MEMORY
Dout
t
t
RHOH
t
RHZ
t
CHZ
COH
Advance