k9f4g08u0m-y Samsung Semiconductor, Inc., k9f4g08u0m-y Datasheet - Page 37

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k9f4g08u0m-y

Manufacturer Part Number
k9f4g08u0m-y
Description
512m X 8 Bits / 1g X 8 Bits Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Figure 17. Two-Plane Copy-Back program Operation with Random Data Input
K9K8G08U1M
K9F4G08U0M
R/B
I/Ox
R/B
I/Ox
R/B
I/Ox
Note
00h
:
1
2
1. Copy-Back Program operation is allowed only within the same memory plane.
2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even
address page(target page) or from an even address page(source page) to an odd address page(target page).
Therefore, the copy-back program is permitted just between odd address pages or even address pages.
3. EDC status Bits are not available during copy back for some bits or bytes modified by Random Data Input operation.
in case of the 528 byte plane unit modification, EDC status bits are abailable
Source Address On Plane0
Col. Add.1,2 & Row Add.1,2,3
Add.(5Cycles)
85h
85h
Col. Add.1,2 & Row Add.1,2,3
Col. Add.1,2 & Row Add.1,2,3
A
A
A
A
A
A
A
A
0
12
18
19
Destination Address
Destination Address
0
12
18
19
~ A
~ A
~ A
~ A
~ A
~ A
Add.(5Cycles)
Add.(5Cycles)
11 :
11 :
17 :
29 :
35h
17 :
29 :
:
:
Fixed ’High’
Valid
Valid
Valid
Fixed ’Low’
Fixed ’Low’
Valid
Fixed ’Low’
t
R
Data
Data
00h
Source Address On Plane1
Col. Add.1,2 & Row Add.1,2,3
Add.(5Cycles)
85h
85h
37
Add.(2Cycles)
Add.(2Cycles)
Col. Add.1,2
Col. Add.1,2
35h
t
R
Data
Data
FLASH MEMORY
11h
10h
t
t
DBSY
PROG
Advance
1
2

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