k9f4g08u0m-y Samsung Semiconductor, Inc., k9f4g08u0m-y Datasheet - Page 9

• Manufacturer Part Number: k9f4g08u0m-y
• Description: 512m X 8 Bits / 1g X 8 Bits Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9K8G08U1M
K9F4G08U0M
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F4G08U0M-XCB0
DC AND OPERATING CHARACTERISTICS
NOTE : 1. V
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
Operating
Supply Voltage
Supply Voltage
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Current
Maximum DC voltage on input/output pins is V
2. Typical value is measured at Vcc=3.3V, T
Parameter
IL
Parameter
can undershoot to -0.4V and V
Page Read with
Serial Access
Program
Erase
Parameter
K9F4G08U0M-XCB0
K9F4G08U0M-XIB0
K9F4G08U0M-XCB0
K9F4G08U0M-XIB0
Symbol
I
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
I
(R/B)
LO
OH
Symbol
LI
IH*
OL
IL*
1
2
1
2
3
IH
V
V
CC
SS
can overshoot to V
CC
A
+0.3V which, during transitions, may overshoot to V
tRC=25ns
CE=V
CE=V
CE=V
V
V
K9F4G08U0M :I
K9F4G08U0M :I
K9F4G08U0M :V
=25 C. Not 100% tested.
IN
OUT
=0 to Vcc(max)
:
T
=0 to Vcc(max)
A
IL,
IH
CC
=0 to 70 C, K9F4G08U0M-XIB0
, WP=0V/V
Test Conditions
I
-0.2, WP=0V/V
OUT
=0mA
CC
Min
2.7
0
+0.4V for durations of 20 ns or less.
(Recommended operating conditions otherwise noted.)
-
-
-
-
OH
OL
OL
=2.1mA
CC
=-400 A
=0.4V
9
V
Symbol
V
CC/
CC
T
T
IN/OUT
I
BIAS
STG
OS
V
CCQ
Typ.
3.3
0.8xVcc
0
Min
-0.3
2.4
:
8
T
-
-
-
-
-
-
A
=-40 to 85 C)
CC
-0.6 to +4.6
-0.6 to +4.6
-10 to +125
-40 to +125
-65 to +150
+2.0V for periods <20ns.
Rating
5
Typ
FLASH MEMORY
15
10
10
-
-
-
-
-
-
-
Max
3.6
0
Vcc+0.3
0.2xVcc
Max
±10
±10
0.4
30
50
1
-
-
Advance
Unit
Unit
mA
V
V
V
C
C
Unit
mA
mA
V
A