k4r881869e Samsung Semiconductor, Inc., k4r881869e Datasheet - Page 3

• Manufacturer Part Number: k4r881869e
• Description: 288mbit Rdram 512k X 18bit X 32s Banks
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869E
Overview
The RDRAM
mance memory device suitable for use in a broad range of
applications including computer memory, graphics, video,
and any other application where high bandwidth and low
latency are required.
The 288Mbit RDRAM devices are extremely high-speed
CMOS DRAMs organized as 16M words by 18 bits. The use
of Rambus Signaling Level (RSL) technology permits up to
1200 MHz transfer rates while using conventional system
and board design technologies. RDRAM devices are capable
of sustained data transfers up to 0.883ns per two bytes (6.7ns
per sixteen bytes).
The architecture of RDRAM devices allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The RDRAM device's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
♦
♦
♦
♦
♦
operation
Highest sustained bandwidth per DRAM device
Low latency features
Advanced power management:
Organization: 2kbyte pages and 32 banks, x 18
Uses Rambus Signaling Level (RSL) for up to 1200MHz
- 2.4GB/s sustained data transfer rate
- Separate control and data buses for maximized
- Separate row and column control buses for
- 32 banks: four transactions can take place simul-
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
- Multiple low power states allows flexibility in power
- Power-down self-refresh
- x18 organization allows ECC configurations or
increased storage/bandwidth
efficiency
easy scheduling and highest performance
taneously at full bandwidth data rates
consumption versus time to transition to active state

device is a general purpose high-perfor-
Page 1
The 288Mbit RDRAM devices are offered in a CSP hori-
zontal package suitable for desktop as well as low-profile
add-in card and mobile applications.
Key Timing Parameters/Part Numbers
a.“32s” - 32 banks which use a “split” bank architecture.
b.“G” - WBGA lead-free package , “F” - WBGA package
c.“C” - RDRAM core uses normal power self refresh.
Organization
512Kx18x32s
512Kx18x32s
Figure 1: Direct RDRAM CSP Package
a
-CN1
-CM8
-CN1
-CM8
-CT9
-CK8
-CT9
-CK8
Bin
K4R881869E -
K4R881869E -
SAMSUNG 410
SAMSUNG
SAMSUNG 410
SAMSUNG
SAMSUNG 410
SAMSUNG
SAMSUNG 410
SAMSUNG
Speed
Freq.
1200
1066
1200
1066
MHz
800
800
800
800
I/O
Version 1.4 Dec. 2003
Time) ns
Access
(Row
t
32P
32P
RAC
32
40
45
32
40
45
Direct RDRAM
K4R881869E-G
K4R881869E-GCM8
K4R881869E-GCT9
K4R881869E-GCK8
K4R881869E-FCM8
K4R881869E-FCT9
K4R881869E-FCK8
K4R881869E-F
xC
xC
xC
xC
Part Number
xx
xx
xx
xx
xx
xx
xx
xx
b
CN1
C
c
N1
™