k4r881869e Samsung Semiconductor, Inc., k4r881869e Datasheet - Page 4

• Manufacturer Part Number: k4r881869e
• Description: 288mbit Rdram 512k X 18bit X 32s Banks
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869E
ROW
Pinouts and Definitions
Center-Bonded Devices
These tables shows the pin assignments of the center-bonded
RDRAM package. The mechanical dimensions of this
The pin #1(ROW 1, COL A) is located at the
A1 position on the top side and the A1 position
is marked by the marker
COL
10
9
8
7
6
5
4
3
2
1
K4R881869E
K4R881869E
GND
GND
V
V
A
DD
DD
SAMSUNG
SAMSUNG
SAMSUNG
SAMSUNG
SAMSUNG
SAMSUNG
SAMSUNG
SAMSUNG
DQA8
GND
GND
V
V
V
B
DD
DD
DD
DQA7
DQA6
CMD
GND
SCK
GND
C
“
”
.
V
DQA5
DQA4
-
-
V
CMOS
D
DD
xC
xC
xC
xC
410
410
410
410
DQA3
DQA2
GND
GND
GND
V
xx
xx
xx
xx
xx
xx
xx
xx
E
DD
GNDa
DQA1
DQA0
GND
V
V
F
DD
DD
CTMN
GNDa
CFM
GND
GND
V
G
DD
CFMN
V
CTM
V
H
DDa
DD
Page 2
V
RQ7
RQ6
V
REF
J
DD
package are shown in a later section. Refer to Section
“Center-Bonded WBGA Package” on page 18. Note - pin #1
is at the A1 position.
GND
RQ5
RQ4
GND
K
GND
RQ3
RQ2
V
L
DD
GND
GND
RQ1
RQ0
V
V
M
DD
DD
DQB1
DQB0
GND
GND
V
V
N
Top View
Version 1.4 Dec. 2003
DD
DD
Chip
Direct RDRAM
DQB3
DQB2
GND
GND
V
V
P
DD
DD
DQB5
DQB4
GND
SIO0
R
V
DQB7
DQB6
SIO1
GND
GND
CMOS
S
DQB8
GND
GND
V
V
V
T
DD
DD
DD
GND
GND
V
V
U
DD
DD
™