hcts244ms Intersil Corporation, hcts244ms Datasheet

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hcts244ms

Manufacturer Part Number
hcts244ms
Description
Radiation Hardened Octal Buffer/line Driver, Three-state
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)/s
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS244MS is a Radiation Hardened Non-
Inverting Octal Buffer/Line Driver, Three-State, with two
active-low output enables.
The HCTS244MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS244MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS244DMSR
HCTS244KMSR
HCTS244D/Sample
HCTS244K/Sample
HCTS244HMSR
Bit-Day (Typ)
- Bus Driver Outputs - 15 LSTTL Loads
- VIL = 0.8V Max
- VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
-55
-55
RAD (Si)/s
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
602
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
GND
HCTS244MS
OE
Octal Buffer/Line Driver, Three-State
A0
Y3
A1
Y2
A2
Y1
A3
Y0
SCREENING LEVEL
1
1
2
1
2
1
2
1
2
FLATPACK PACKAGE (FLATPACK)
GND
20 LEAD CERAMIC DUAL-IN-LINE
20 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
OE
A0
A1
A2
A3
Y3
Y2
Y1
Y0
MIL-STD-1835 CDFP4-F20
MIL-STD-1835 CDIP2-T20
1
1
2
1
2
1
2
1
2
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
TOP VIEW
TOP VIEW
Radiation Hardened
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
11
Spec Number
File Number
PACKAGE
2
1
2
1
2
1
2
1
2
VCC
OE
Y0
A3
Y1
A2
Y2
A1
Y3
A0
2
1
2
1
2
1
2
1
2
518616
2133.2
VCC
OE
Y0
A3
Y1
A2
Y2
A1
Y3
A0

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hcts244ms Summary of contents

Page 1

... The HCTS244MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS244MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE ...

Page 2

... Functional Diagram 1Y0 1OE 2 1A0 H = High Voltage Level L = Low Voltage Level X = Immaterial Z = High Impedance HCTS244MS 1Y1 1Y2 1Y3 2Y0 2Y1 1A1 1A2 1A3 2A0 2A1 TRUTH TABLE INPUTS OUTPUT ...

Page 3

... VCC = 4.5V, VIH = 2.25V, Functional Test VIL = 0.8V, (Note 2) NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO Specifications HCTS244MS Reliability Information Thermal Resistance SBDIP Package 10mA Ceramic Flatpack Package . . . . . . . . . . . 25mA Maximum Package Power Dissipation at +125 SBDIP Package ...

Page 4

... The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. Specifications HCTS244MS GROUP (NOTES 1, 2) ...

Page 5

... TPHZ NOTES: 1. All voltages referenced to device GND measurements assume RL = 500 , CL = 50pF, Input 3ns, VIL = GND, VIH = 3V. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH IOZL/IOZH Specifications HCTS244MS (NOTES 1, 2) CONDITIONS TEMPERATURE GROUP B SUBGROUP DELTA LIMIT 5 5 ...

Page 6

... Each pin except VCC and GND will have a resistor of 680 OPEN 12, 14, 16, 18 NOTE: Each pin except VCC and GND will have a resistor of 47K Subgroup 2, sample size is 4 dice/wafer 0 failures. Specifications HCTS244MS TABLE 6. APPLICABLE SUBGROUPS METHOD GROUP A SUBGROUPS 100%/5004 ...

Page 7

... Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. HCTS244MS 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition hrs ...

Page 8

... Three-State Low Timing Diagrams VIH INPUT VS VIL TPZL VOZ VT OUTPUT VOL THREE-STATE LOW VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VT 1.30 VW 0.90 GND 0 HCTS244MS AC Load Circuit TPHL TTHL 80% 20% UNITS Three-State Low Load Circuit TPLZ VW UNITS 609 DUT TEST ...

Page 9

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 HCTS244MS Three-State High Load Circuit DUT TPHZ VW UNITS V V ...

Page 10

... NOTE: The die diagram is a generic plot from a similar HCS device intended to indicate approximate die size and bond pad location. The mask series for the HCTS244 is TA14402A. HCTS244MS HCTS244MS 1A0 1OE VCC 2OE (2) (1) (20) ...

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