mgw12n120d ON Semiconductor, mgw12n120d Datasheet
mgw12n120d
Available stocks
Related parts for mgw12n120d
mgw12n120d Summary of contents
Page 1
... Preferred devices are Motorola recommended choices for future use and best overall value. REV 3 Motorola IGBT Device Data Motorola, Inc. 1998 Rating = Order this document by MGW12N120D/D Motorola Preferred Device IGBT & DIODE IN TO–247 1200 VOLTS SHORT CIRCUIT RATED CASE 340K–01 STYLE 4 TO– ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage ( Vdc Adc Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (V = 1200 Vdc Vdc 1200 Vdc, ...
Page 3
ELECTRICAL CHARACTERISTICS — continued Characteristic DIODE CHARACTERISTICS — continued Reverse Recovery Time Reverse Recovery Stored Charge Reverse Recovery Time Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond ...
Page 4
Figure 5. Capacitance Variation Figure 7. Turn–On Losses versus Gate Resistance 4 Figure 6. Gate–to–Emitter Voltage versus Figure 8. Turn–On Losses versus Figure 9. Turn–On Losses versus Collector Current Total Charge Case Temperature Motorola IGBT Device Data ...
Page 5
Figure 10. Diode Forward Voltage Drop Motorola IGBT Device Data Figure 11. Reverse Biased Figure 12. Thermal Response Safe Operating Area 5 ...
Page 6
... JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 Mfax is a trademark of Motorola, Inc. MGW12N120D/D Motorola IGBT Device Data ...