mgw12n120d ON Semiconductor, mgw12n120d Datasheet - Page 2

• Manufacturer Part Number: mgw12n120d
• Description: Insulated Gate Bipolar Transistor With Anti-parallel Diode N?cchannel Enhancement?cmode Silicon Gate
• Manufacturer: ON Semiconductor

(1) Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (1)
DIODE CHARACTERISTICS
2
Collector–to–Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate–Body Leakage Current (V
Collector–to–Emitter On–State Voltage
Gate Threshold Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
Diode Forward Voltage Drop
(V
Temperature Coefficient (Positive)
(V
(V
(V
(V
(V
(V
Threshold Temperature Coefficient (Negative)
(I
(I
(I
EC
EC
EC
GE
CE
CE
GE
GE
GE
CE
= 5.0 Adc)
= 5.0 Adc, T
= 10 Adc)
= 0 Vdc, I
= 1200 Vdc, V
= 1200 Vdc, V
= 15 Vdc, I
= 15 Vdc, I
= 15 Vdc, I
= V
GE
, I
C
C
= 1.0 mAdc)
C
C
C
J
= 25 Adc)
= 5.0 Adc)
= 5.0 Adc, T
= 10 Adc)
= 125 C)
GE
GE
= 0 Vdc)
= 0 Vdc, T
300 s, Duty Cycle
CE
Characteristic
GE
J
= 10 Vdc, I
= 125 C)
=
J
= 125 C)
20 Vdc, V
(T
J
(V
(
(V
(
(V
(V
(V
(V
Energy losses include “tail”
Energy losses include “tail”
= 25 C unless otherwise noted)
V
V
V
V
C
CC
CC
CC
CC
CC
CE
R
R
GE
GE
= 10 Adc)
G
G
= 720 Vdc, I
= 720 Vdc, I
= 25 Vdc, V
= 720 Vdc, I
CE
= 15 Vdc, L = 300 mH
= 15 Vdc, L = 300 mH
= 20
= 20
2%.
V
V
720 Vd I
25 Vd
15 Vd L
15 Vd L
f = 1.0 MHz)
f = 1.0 MHz)
GE
GE
R
R
= 0 Vdc)
G
G
= 15 Vdc)
= 15 Vdc)
= 20 )
= 20 )
T
T
,
,
V
J
J
GE
= 125 C)
= 125 C)
C
C
C
C
C
= 10 Adc,
= 10 Adc,
= 10 Adc,
300 H
300 H
= 0 Vdc,
10 Ad
0 Vd
,
,
V
Symbol
V
V
(BR)CES
t
t
V
C
t
t
I
I
CE(on)
C
C
GE(th)
d(on)
d(off)
d(on)
d(off)
GES
E
E
E
E
CES
E
E
g
Q
Q
Q
FEC
oes
res
t
t
t
t
ies
fe
off
on
off
on
r
ts
r
ts
f
f
T
1
2
1200
Min
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Motorola IGBT Device Data
1003
2.71
3.78
0.55
1.21
1.76
1.49
2.37
3.86
2.26
1.37
2.86
Typ
870
126
106
231
120
575
3.5
6.0
10
12
74
83
76
66
87
29
13
12
—
—
—
—
2500
Max
3.37
4.42
1.33
1.88
3.21
3.32
4.18
100
250
8.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
(continued)
mV/ C
mV/ C
Mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mJ
mJ
pF
nC
Adc
ns
ns