mgw12n120d ON Semiconductor, mgw12n120d Datasheet - Page 3

• Manufacturer Part Number: mgw12n120d
• Description: Insulated Gate Bipolar Transistor With Anti-parallel Diode N?cchannel Enhancement?cmode Silicon Gate
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS — continued
DIODE CHARACTERISTICS — continued
INTERNAL PACKAGE INDUCTANCE
Motorola IGBT Device Data
Reverse Recovery Time
Reverse Recovery Stored Charge
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Emitter Inductance
(Measured from the emitter lead 0.25 from package to emitter bond pad)
Figure 3. Transfer Characteristics
Figure 1. Output Characteristics
Characteristic
TYPICAL ELECTRICAL CHARACTERISTICS
dI
(I
(I
(I
(I
F
F
F
F
F
/dt = 100 A/ s, T
= 10 Adc, V
= 10 Adc, V
10 Adc, V
dI
10 Adc, V
F
/dt = 100 A/ s)
(T
R
R
R
R
J
= 25 C unless otherwise noted)
= 720 Vdc,
= 720 Vdc,
J
720 Vdc,
720 Vdc,
= 125 C)
Symbol
Figure 4. Collector–to–Emitter Saturation
Q
Q
Voltage versus Junction Temperature
L
t
t
t
t
t
t
RR
RR
rr
a
b
rr
a
b
E
Figure 2. Output Characteristics
Min
—
—
—
—
—
—
—
—
—
0.36
1.40
Typ
234
149
116
69
47
85
13
Max
—
—
—
—
—
—
—
—
—
Unit
nH
ns
ns
C
C
3