mgw12n120 Freescale Semiconductor, Inc, mgw12n120 Datasheet
mgw12n120
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mgw12n120 Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 Order this document by MGW12N120/D MGW12N120 Motorola Preferred Device IGBT IN TO–247 ...
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... MGW12N120 ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage ( Vdc Adc) Temperature Coefficient (Positive) Emitter–to–Collector Breakdown Voltage ( Vdc 100 mAdc) Zero Gate Voltage Collector Current ( 1200 Vdc Vdc 1200 Vdc Vdc 125° ...
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... JUNCTION TEMPERATURE (°C) Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature Figure 6. Gate–to–Emitter Voltage versus MGW12N120 100 ...
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... MGW12N120 720 125°C 2.5 2 7 GATE RESISTANCE (OHMS) Figure 7. Total Switching Losses versus Gate Resistance 2 720 2 Ω 125°C 2 1.8 1.6 1.4 1 COLLECTOR–TO–EMITTER CURRENT (AMPS) Figure 9. Total Switching Losses versus Collector– ...
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... Motorola TMOS Power MOSFET Transistor Device Data P (pk DUTY CYCLE 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) Figure 12. Thermal Response MGW12N120 R θJC (t) = r(t) R θJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk) – (pk) R θJC (t) 1.0E+00 1.0E+01 5 ...
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... B 15.44 15.95 0.608 0.628 C 4.70 5.21 0.185 0.205 D 1.09 1.30 0.043 0.051 E 1.50 1.63 0.059 0.064 F 1.80 2.18 0.071 0.086 G 5.45 BSC 0.215 BSC H 2.56 2.87 0.101 0.113 J 0.48 0.68 0.019 0.027 K 15.57 16.08 0.613 0.633 L 7.26 7.50 0.286 0.295 P 3.10 3.38 0.122 0.133 Q 3.50 3.70 0.138 0.145 R 3.30 3.80 0.130 0.150 U 5.30 BSC 0.209 BSC V 3.05 3.40 0.120 0.134 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MGW12N120/D ...