mgw12n120 Freescale Semiconductor, Inc, mgw12n120 Datasheet - Page 2

• Manufacturer Part Number: mgw12n120
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: Freescale Semiconductor, Inc

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
MGW12N120
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (1)
INTERNAL PACKAGE INDUCTANCE
2
Collector–to–Emitter Breakdown Voltage
Emitter–to–Collector Breakdown Voltage (V GE = 0 Vdc, I EC = 100 mAdc)
Zero Gate Voltage Collector Current
Gate–Body Leakage Current (V GE = ± 20 Vdc, V CE = 0 Vdc)
Collector–to–Emitter On–State Voltage
Gate Threshold Voltage
Forward Transconductance (V CE = 10 Vdc, I C = 10 Adc)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
Internal Emitter Inductance
(V GE = 0 Vdc, I C = 25 Adc)
Temperature Coefficient (Positive)
(V CE = 1200 Vdc, V GE = 0 Vdc)
(V CE = 1200 Vdc, V GE = 0 Vdc, T J = 125°C)
(V GE = 15 Vdc, I C = 5.0 Adc)
(V GE = 15 Vdc, I C = 5.0 Adc, T J = 125°C)
(V GE = 15 Vdc, I C = 10 Adc)
(V CE = V GE , I C = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
Characteristic
(T J = 25°C unless otherwise noted)
(V CE = 25 Vdc, V GE = 0 Vdc,
(V CE = 25 Vdc, V GE = 0 Vdc,
(V
(V CC = 720 Vdc, I C = 10 Adc,
(V
(V CC = 720 Vdc, I C = 10 Adc,
(V CC = 720 Vdc, I C = 10 Adc,
(V CC = 720 Vdc, I C = 10 Adc,
Energy losses include “tail”
Energy losses include “tail”
V GE = 15 Vdc, L = 300
V GE = 15 Vdc, L = 300
V GE = 15 Vdc, L = 300
V GE = 15 Vdc, L = 300
CC
CC
R G = 20 Ω, T J = 125°C)
R G = 20 Ω, T J = 125°C)
R G = 20 Ω, T J = 25°C)
R G = 20 Ω, T J = 25°C)
= 720 Vdc, I = 10 Adc,
= 720 Vdc, I = 10 Adc,
V GE = 15 Vdc)
V GE = 15 Vdc)
f = 1.0 MHz)
f = 1.0 MHz)
C
C
m
m
m
m
m
m
m
m
m
m
H
H
H
H
Motorola TMOS Power MOSFET Transistor Device Data
V CE(on)
Symbol
V GE(th)
BV CES
BV ECS
t d(on)
t d(on)
t d(off)
t d(off)
I CES
I GES
C oes
C res
C ies
E off
E off
g fe
Q T
Q 1
Q 2
L E
t r
t f
t r
t f
1200
Min
4.0
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.51
2.36
3.21
0.55
1.49
Typ
870
930
126
231
120
575
6.0
10
12
16
74
83
76
66
87
31
13
14
13
—
—
—
—
—
2500
Max
3.37
4.42
1.33
100
250
8.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C
mV/°C
Mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mJ
mJ
nC
nH
Adc
pF
ns
ns