mgw12n120 Freescale Semiconductor, Inc, mgw12n120 Datasheet - Page 4

• Manufacturer Part Number: mgw12n120
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: Freescale Semiconductor, Inc

MGW12N120
4
2.5
1.5
2.4
2.2
1.8
1.6
1.4
1.2
3
2
1
2
1
10
5
V CC = 720 V
V GE = 15 V
T J = 125°C
V CC = 720 V
V GE = 15 V
R G = 20 Ω
T J = 125°C
Figure 7. Total Switching Losses versus
Figure 9. Total Switching Losses versus
I C , COLLECTOR–TO–EMITTER CURRENT (AMPS)
6
Collector–to–Emitter Current
20
R G , GATE RESISTANCE (OHMS)
Gate Resistance
7
I C = 10 A
7.5 A
30
5 A
8
100
0.1
10
1
1
V GE = 15 V
R GE = 20 Ω
T J ≤ 125°C
40
V CE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
9
Figure 11. Reverse Biased
10
Safe Operating Area
50
10
100
Motorola TMOS Power MOSFET Transistor Device Data
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
25
20
15
10
3
2
1
5
0
0
0
25
Figure 10. Maximum Forward Drop versus
V CC = 720 V
V GE = 15 V
R G = 20 Ω
Figure 8. Total Switching Losses versus
1000
Instantaneous Forward Current
V FM , FORWARD VOLTAGE DROP (VOLTS)
50
1
T C , CASE TEMPERATURE (°C)
Case Temperature
T J = 125°C
10000
75
I C = 10 A
7.5 A
5 A
2
100
T J = 25°C
3
125
150
4