mgfs39e2527a-01 Mitsumi Electronics, Corp., mgfs39e2527a-01 Datasheet
mgfs39e2527a-01
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mgfs39e2527a-01 Summary of contents
Page 1
... Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. 6.0 6.0 Vc2 Vc3,Vcb3,4 Bias Circuit Vref3,4 (1/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Outline Drawing 6 39E2527A 28 3 ...
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... MITSUBISHI ELECTRIC CORP. Conditions - - - - - - Pout<=30dBm Duty<=50% - Test Conditions Vc=6V, Vref=2.85V Pout=30dBm 64QAM OFDM Modulation Duty Cycle <= 50% th stage is calculated as 5.5 deg.C/W ) (2/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Value Unit 3 300 mA 300 mA 2000 mA -3 dBm 160 deg ...
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... Output Power(dBm) Spectrum Emission Mask 0 -5 -10 -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) (a)5.05MHz offset MITSUBISHI ELECTRIC CORP. MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit EVM vs. Output Power 6.0 5.0 4.0 2.5GHz 2.6GHz 3.0 2.7GHz 2.0 1.0 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) Detector Voltage vs. Output Power 3.0 2.5 2.0 2.5GHz 2.6GHz 1 ...
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... Specifications are subject to change without notice. Attenuator Performance 2.45 2.55 Frequency ( GHz ) Noise figure 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2.00 2.20 MITSUBISHI ELECTRIC CORP. 2.65 2.75 Vcont=0V Vcont=3V 2.40 2.60 2.80 Frequncy (GHz) (4/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit 3.00 Rev. 1.0 Sep. 30-2009 ...
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... Output Power(dBm) Spectrum Emission Mask 0 -5 -10 -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) (a)5.05MHz offset MITSUBISHI ELECTRIC CORP. MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit EVM vs. Output Power 6.0 5.0 4.0 2.5GHz 2.6GHz 3.0 2.7GHz 2.0 1.0 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) Detector Voltage vs. Output Power 3.0 2.5 2.0 2.5GHz 2.6GHz 1 ...
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... Specifications are subject to change without notice. Attenuator Performance 2.45 2.55 Frequency ( GHz ) Noise figure 2.00 2.20 MITSUBISHI ELECTRIC CORP. 2.65 2.75 Vcont=0V Vcont=3V 2.40 2.60 2.80 Frequncy (GHz) (6/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit 3.00 Rev. 1.0 Sep. 30-2009 ...
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... Output Power(dBm) Spectrum Emission Mask 0 -5 -10 -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) (a)5.05MHz offset MITSUBISHI ELECTRIC CORP. MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit EVM vs. Output Power 6.0 5.0 4.0 2.5GHz 2.6GHz 3.0 2.7GHz 2.0 1.0 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) Detector Voltage vs. Output Power 3.0 2.5 2.0 2.5GHz 2.6GHz 1 ...
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... Specifications are subject to change without notice. Attenuator Performance 2.45 2.55 Frequency ( GHz ) Noise figure 2.00 2.20 MITSUBISHI ELECTRIC CORP. 2.65 2.75 Vcont=0V Vcont=3V 2.40 2.60 2.80 Frequncy (GHz) (8/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit 3.00 Rev. 1.0 Sep. 30-2009 ...
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... Output Power(dBm) Spectrum Emission Mask 0 -5 -10 -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) (a)5.05MHz offset MITSUBISHI ELECTRIC CORP. MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit EVM vs. Output Power 6.0 5.0 4.0 2.5GHz 2.6GHz 3.0 2.7GHz 2.0 1.0 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) Detector Voltage vs. Output Power 3.0 2.5 2.0 2.5GHz 2.6GHz 1 ...
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... Specifications are subject to change without notice. Attenuator Performance 2.45 2.55 Frequency ( GHz ) Noise figure 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2.00 2.20 MITSUBISHI ELECTRIC CORP. 2.65 2.75 Vcont=0V Vcont=3V 2.40 2.60 2.80 Frequncy (GHz) (10/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit 3.00 Rev. 1.0 Sep. 30-2009 ...
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... Output Power(dBm) Spectrum Emission Mask 0 -5 -10 -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) (a)5.05MHz offset MITSUBISHI ELECTRIC CORP. MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit EVM vs. Output Power 6.0 5.0 4.0 2.5GHz 2.6GHz 3.0 2.7GHz 2.0 1.0 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) Detector Voltage vs. Output Power 3.0 2.5 2.0 2.5GHz 2.6GHz 1 ...
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... Specifications are subject to change without notice. Attenuator Performance 2.45 2.55 Frequency ( GHz ) Noise figure 2.00 2.20 MITSUBISHI ELECTRIC CORP. 2.65 2.75 Vcont=0V Vcont=3V 2.40 2.60 2.80 Frequncy (GHz) (12/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit 3.00 Rev. 1.0 Sep. 30-2009 ...
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... Output Power(dBm) Spectrum Emission Mask 0 -5 -10 -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) (a)5.05MHz offset MITSUBISHI ELECTRIC CORP. MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit EVM vs. Output Power 6.0 5.0 4.0 2.5GHz 2.6GHz 3.0 2.7GHz 2.0 1.0 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) Detector Voltage vs. Output Power 3.0 2.5 2.0 2.5GHz 2.6GHz 1 ...
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... Specifications are subject to change without notice. Attenuator Performance 2.45 2.55 Frequency ( GHz ) Noise figure 2.00 2.20 MITSUBISHI ELECTRIC CORP. 2.65 2.75 Vcont=0V Vcont=3V 2.40 2.60 2.80 Frequncy (GHz) (14/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit 3.00 Rev. 1.0 Sep. 30-2009 ...
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... Vref3,4 37 Vcon 40 Vref1,2 MITSUBISHI ELECTRIC CORP. MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit GND Top View Description These pins are not wired inside. Both connecting to GND and open is acceptable recommended to connect as shown in the example metal land plan. These pins are internally grounded inside the package and it is recommended to ground them ...
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... C1, C2, C3, C11, C12, C13, C14, C15, C18 C4 C5 C19, C22, C23, C24 C20, C21 R1 MITSUBISHI ELECTRIC CORP. MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Vref(2.85V) Vdet Vcont(0/3V) Vc(6V) DESCRIPTION MGFS39E2527A 1 nF, 1005 Murata, GRM155B11H102K 10 nF, 1005 Murata, GRM155B11E103K 2.2 pF, 1005 Murata, GJM1553C1H2R2B 3 ...
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... E=4.1deg E=1.6deg E=3.7deg F=2.7GHz F=2.7GHz F=2.7GHz C15 C18 1nF 1nF C22 C23 47u F 47u F Vc2 Vc3 (17/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit C9 Z=50 Z=50 Z=41.3 Z= E=5.1deg E=1.4deg 3.6pF E=2.3deg E=42.7deg F=2.7GHz F=2.7GHz F=2.7GHz F=2.7GHz C11 1nF C24 ...
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... Oscilloscope Vdet DUT DUT Attenuator Attenuator Vref Vcont Vcc Pulse Power Supply Pulse Power Supply (18/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit • Pulse Period : 5ms • Pulse Width : 2.5 ms • Delay time : 0 ms • Rise time of Vref pulse : 100ns • Set up time of quiescent current ...
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... MITSUBISHI ELECTRIC CORP. 0.9(max.) 0.2 Side View W:290 p:210 790 800 W:290 p:210 (19/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit 3-R0.3 5.0 4.2 4.2 0.2 P0 4.5 Bottom View 6600 1695 p 1000 200 800 3790 210 ...
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... GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste. MITSUBISHI ELECTRIC CORP. Peak 245deg.C 240deg.C 225deg.C ≤ 10 ≤ 70 Max. Ramp Up Rate 180 ± 10 deg C . 120 ± Max. Ramp Down Rate 20sec (20/20) MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit sec sec ≤ 3deg./sec. ≤ 6deg./sec. Rev. 1.0 Sep. 30-2009 ...