mgfs39e2527a-01 Mitsumi Electronics, Corp., mgfs39e2527a-01 Datasheet - Page 17

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mgfs39e2527a-01

Manufacturer Part Number
mgfs39e2527a-01
Description
2.5-2.7ghz Hbt Integrated Circuit
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
MGFS39E2527A-01
Manufacturer:
Mitsubishi
Quantity:
1 400
Specifications are subject to change without notice.
APPLICATION CIRCUIT IN EVALUATION BOARD
NOTE:
<Layout>
A properly designed PC board is essential to any RF/microwave circuit. Be sure to use controlled impedance lines on all
high-frequency inputs and outputs. A ground plane should be present on both the top and bottom of the PC board and
plated-through via holes connecting the top and bottom ground planes should be distributed (See page 6). GND pins and
ground paddle of the package should be connected to the bottom ground plane with plated-through via holes close to the
package. To improve the heat resistance, place as many plated-through via holes as possible under the ground paddle (See
page. 9).
<Output matching circuit>
The output matching circuit is not included in the device so that users can determine the optimum output performance on
their boards at the frequencies of interest. Since the circuit dictates the RF characteristics of PA, especially distortion, it
should be designed with great care to obtain its maximum ability.
The schematic of the evaluation board is shown above. Capacitors, C5~C10 and C24, and controlled impedance lines are
optimized to realize broad-band output matching at frequencies from 2.5 to 2.7GHz.
Input and output matching networks are very sensitive to layout-related parasitic effects. Suggested component values may
vary according to layout and PC board material.
<Bias circuit>
Since the high-impedance feed line for Vc4 is not included in the device, the line has to be laid out on the PCB. In layout
design, please refer to the reference circuit of the feed line which affects the distortion.
Each Vc node on the board should have its own decoupling capacitor to minimize supply coupling from one section of the
MMIC to another. A bypass capacitor with low ESR at the RF frequency of operation is located close to the package to reject
the RF noise. In addition, a large decoupling capacitor is located on each power supply line to reject low frequency noise.
RFIN
Vc1
C12
C19
NC
NC
NC
NC
NC
NC
NC
47u F
1nF
C1
1nF
Vref1_2
10
1
2
3
4
5
6
7
8
9
C20
MGFS39E2527A
1uF
C2
C13
Vcb1
1nF
1nF
MITSUBISHI ELECTRIC CORP.
Vcon
Vcb2
C3
C14
C21
0
1nF
1nF
1uF
Vref3_4
Vc2
C15
C22
C4
R1
33kOhm
Vdet
10n F
47u F
1nF
(17/20)
30
29
28
27
26
25
24
23
22
21
0
0
Vc3
C18
C23
47u F
1nF
Z=8.5
E=4.1deg
F=2.7GHz
E
C6
C5
Z=8.5
E=1.6deg
F=2.7GHz
E
Z=50
E=3.7deg
F=2.7GHz
E
C7
Z=50
E=5.1deg
F=2.7GHz
2.5-2.7GHz HBT Integrated Circuit
E
MGFS39E2527A-01
MITSUBISHI SEMICONDUCTOR
Vc4
C24
Z=50
E=1.4deg
F=2.7GHz
47u F
E
C11
1nF
C8
3.6pF
Z=41.3
E=2.3deg
F=2.7GHz
Sep. 30-2009
E
Z=50
E=42.7deg
F=2.7GHz
Rev. 1.0
E
C9
RFOUT

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