ipb021n04n Infineon Technologies Corporation, ipb021n04n Datasheet
ipb021n04n
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ipb021n04n Summary of contents
Page 1
... =100 ° =25 ° D,pulse C =25 Ω = =25 ° tot stg page 1 IPB021N04N 40 V 2.1 mΩ 160 A PG-TO263-7 Value Unit 160 A 157 640 898 mJ ±20 V 214 W -55 ... 175 °C 55/175/56 2009-12-11 ...
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... =125 ° = GSS DS(on =0.7 K/W the chip is able to carry 221 A. thJC 2 (one layer, 70 µm thick) copper area for drain page 2 IPB021N04N Values Unit min. typ. max 0.7 K 2.1 3 µ ...
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... Q V oss =25 ° S,pulse = = =25 ° = =50A /dt =100 A/µ page 3 IPB021N04N Values Unit min. typ. max. - 7400 9600 pF - 2000 2660 - 310 465 - ...
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... C 4 Max. transient thermal impedance =f(t Z thJC p parameter µs 100 µ [V] DS page 4 IPB021N04N ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p ...
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... DS 8 Typ. forward transconductance =f 250 200 150 100 25 ° [V] GS page 5 IPB021N04N ); T =25 ° 6 100 200 300 I [A] D =25 ° 100 150 I [ 400 200 2009-12-11 ...
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... Forward characteristics of reverse diode =f parameter [V] DS page 6 IPB021N04N ); 1500 µA 150 µA - 100 140 T [° °C, 98% 25 °C 175 °C, 98% 175 °C 0.5 1 1.5 V [V] SD ...
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... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB021N04N ); I =80 A pulsed gate [nC] gate 120 Q g ate 2009-12-11 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 1.1 ). page 8 IPB021N04N 2009-12-11 ...