ipb021n04n Infineon Technologies Corporation, ipb021n04n Datasheet - Page 6

• Manufacturer Part Number: ipb021n04n
• Description: Optimos
• Manufacturer: Infineon Technologies Corporation

1.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
DS
=f(T
5
4
3
2
1
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=80 A; V
10
20
Crss
Coss
Ciss
GS
98 %
V
=10 V
T
DS
j
60
20
[°C]
[V]
typ
100
30
140
180
page 6
40
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
DS
175 °C
20
150 µA
V
T
SD
j
60
[°C]
1
[V]
25 °C
1500 µA
100
IPB021N04N
1.5
175 °C, 98%
25 °C, 98%
140
2009-12-11
180
2