ipb021n04n Infineon Technologies Corporation, ipb021n04n Datasheet - Page 7

• Manufacturer Part Number: ipb021n04n
• Description: Optimos
• Manufacturer: Infineon Technologies Corporation

1.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
1000
100
10
60
55
50
45
40
35
30
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
20
150 °C
t
T
AV
j
60
[°C]
[µs]
100
100 °C
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=80 A pulsed
g s
40
Q
Q
gate
g
Q
sw
[nC]
Q
g d
80
10 V
IPB021N04N
20 V
30 V
Q
g ate
2009-12-11
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