sts3414 SamHop Microelectronics Corp., sts3414 Datasheet

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sts3414

Manufacturer Part Number
sts3414
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
SamHop Microelectronics Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS3414
Manufacturer:
SAMHOP
Quantity:
20 000
Details are subject to change without notice.
Symbol
V
V
I
P
N-Channel Enhancement Mode Field Effect Transistor
I
ABSOLUTE MAXIMUM RATINGS ( T
T
THERMAL CHARACTERISTICS
R
D
DM
S mHop Microelectronics C orp.
J ,
DS
GS
D
a
PRODUCT SUMMARY
T
JA
V
STG
30V
DSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Thermal Resistance, Junction-to-Ambient
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
4A
I
D
R
-Pulsed
50 @ VGS=10V
60 @ VGS=4.5V
75 @ VGS=2.5V
DS(ON)
S OT-23
b
(m
a
) Max
A
=25 ° C unless otherwise noted )
a
T
T
A
A
=25 ° C
=25 ° C
FEATURES
a
Super high dense cell design for low R
Rugged and reliable.
SOT-23 package.
1
G
Green
Product
D
S
-55 to 150
STS3414
Limit
±12
1.25
100
30
15
4
www.samhop.com.tw
DS(ON)
.
Jan,16,2009
°C/W
Units
°C
W
V
V
A
A
Ver 1.1

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sts3414 Summary of contents

Page 1

... Super high dense cell design for low R (m Ω ) Max Rugged and reliable. SOT-23 package. S OT-23 =25 ° C unless otherwise noted ) A a =25 ° =25 ° STS3414 Green Product . DS(ON Limit 30 ± 1.25 -55 to 150 100 www.samhop.com.tw Ver 1.1 Units V ...

Page 2

... STS3414 ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage Current I GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) R Drain-Source On-State Resistance DS(ON) g Forward Transconductance FS DYNAMIC CHARACTERISTICS C Input Capacitance ISS Output Capacitance C OSS Reverse Transfer Capacitance ...

Page 3

... STS3414 30 V =3. =10V 0 Drain-to-Source Voltage(V) DS Figure 1. Output Characteristics 120 100 Drain Current(A) D Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 - Tj, Junction Temperature( ° Figure 5. Gate Threshold Variation ...

Page 4

... STS3414 120 100 Gate-to-Source Voltage(V) GS Figure 7. On-Resistance vs. Gate-Source Voltage 500 400 300 200 100 Drain-to-Source Voltage(V) DS Figure 9. Capacitance 100 =5V ,ID= 10V 1 6 Rg, Gate Resistance( Figure 11. switching characteristics I =4A ...

Page 5

... STS3414 Figure 13. Switching Test Circuit 10 1 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.01 0.00001 0.0001 d(on OUT V OUT 0.001 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve off t t d(off) r 90% 90% INVE 10% 10% ...

Page 6

... STS3414 PACKAGE OUTLINE DIMENSIONS SOT (TYP .) www.samhop.com.tw Ver 1.1 Jan,16,2009 ...

Page 7

... STS3414 SOT-23 Carrier Tape UNIT: PACKAGE A0 B0 3.20 3.00 SOT-23 0.10 0.10 SOT-23 Reel UNIT: TAPE SIZE REEL SIZE 8 178 SOT-23 Tape and Reel Data 8.00 1.00 1.75 1.33 1.50 +0.30 +0.25 0.10 +0.10 -0. 178 60 9.00 12. 0.5 0.5 7 FEED DIRECTION 3.50 4.00 4.00 2.00 0.05 0.10 0.10 0.10 0. 10.5 2.00 13.5 10.0 5.00 0.5 0.5 www.samhop.com.tw Ver 1 ...

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