sts3414 SamHop Microelectronics Corp., sts3414 Datasheet - Page 2

• Manufacturer Part Number: sts3414
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: SamHop Microelectronics Corp.

STS3414
ELECTRICAL CHARACTERISTICS
Symbol
BV
C
C
C
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
OFF CHARACTERISTICS
ON CHARACTERISTICS
R
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
I
I
V
g
t
t r
t
t f
Q
Q
Q
Notes
I
V
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
DSS
GSS
D(ON)
D(OFF)
S
FS
ISS
OSS
RSS
GS(th)
DS(ON)
g
gs
gd
SD
DSS
Drain-Source Breakdown Voltage
Parameter
Drain-Source On-State Resistance
Output Capacitance
Gate-Source Charge
Gate-Drain Charge
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Maximum Continuous Drain-Source Diode Forward Current
Diode Forward Voltage
_
b
c
_
c
( T
_
A
=25 ° C unless otherwise noted )
Conditions
V
V
V
V
V
V
V
V
V
V
I
V
R
V
V
V
V
V
f=1.0MHz
D
DS
GS
GS
GS
DS
DS
GS
DS
DS
DD
GS
DS
DS
GS
GS
GS
GEN
=1A
=15V,I
=0V , I
=24V , V
=10V , I
=4.5V , I
=15V,I
=V
=2.5V , I
=5.0V , I
=15V,V
=5V
=15V,I
= ±12V , V
=10V
=4.5V
=0V,I
=6 ohm
GS
2
S
, I
D
D
=1.25A
D
D
=250uA
=4A,V
D
GS
=4A,V
=4A,
D
GS
D
D
D
=250uA
=4A
=3A
=1A
=4A
=0V
=0V
DS
=0V
GS
GS
=10V
=4.5V
Min
0.5
30
www.samhop.com.tw
Typ
0.82
440
1.4
0.9
9.3
4.6
50
13
62
37
43
37
45
1
4
8
5
±100
1.25
Max
1.2
1.2
75
50
60
1
Jan,16,2009
Ver 1.1
m ohm
m ohm
m ohm
Units
uA
nA
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
V
V
S
A
V