ntms4101p ON Semiconductor, ntms4101p Datasheet - Page 2

• Manufacturer Part Number: ntms4101p
• Description: Trench Power Mosfet 20 V, 9.0 A, Single P Channel, So 8
• Manufacturer: ON Semiconductor

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
J
= 25°C unless otherwise noted)
dI
V
V
S
V
V
V
V
V
GS
GS
V
V
V
I
/dt = 100 A/ms, I
GS
GS
D
GS
V
DS
V
GS
GS
GS
GS
GS
GS
= −1.0 A, R
= −4.5 V, V
= −4.5 V, V
Test Conditions
= −4.5 V, I
= −2.5 V, I
= V
= −15 V, I
= ±8.0 V, V
= 0 V, I
= 0 V, V
= 0 V, V
V
= 0 V, I
= 0 V, f = 1 MHz,
I
D
DS
DS
http://onsemi.com
= −6.9 A
, I
= −10 V
D
D
S
DS
DS
= −250 mA
D
= −250 mA
DS
DD
D
D
G
= −6.9 A
DS
= −6.9 A
= −10 V,
= −16 V
= −6.9 A
= −6.5 A
= 6.0 Ω
S
= −10 V,
= −10 V,
= −6.9 A
2
= 0 V
V
Symbol
Q
R
V
(BR)DSS
t
t
I
I
C
G(TOT)
Q
Q
DS(on)
C
V
GS(th)
C
d(on)
g
d(off)
DSS
GSS
Q
t
t
t
FS
oss
GD
t
t
SD
rss
GS
iss
rr
a
b
r
f
rr
−0.45
Min
−20
3200
29.5
12.5
38.5
0.72
.017
Typ
320
192
144
6.0
7.5
9.0
16
22
70
28
12
15
±100
Max
0.95
−10
19
30
32
35
Unit
mW
nC
nC
mA
nA
pF
ns
ns
V
V
S
V