ntms4101p ON Semiconductor, ntms4101p Datasheet - Page 4

• Manufacturer Part Number: ntms4101p
• Description: Trench Power Mosfet 20 V, 9.0 A, Single P Channel, So 8
• Manufacturer: ON Semiconductor

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
100
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
10
500
1
0
1
−8
Figure 9. Resistive Switching Time Variation
C
C
iss
rss
t
t
d(off)
d(on)
−6
t
t
f
r
R
Figure 7. Capacitance Variation
G
−4
, GATE RESISTANCE (OHMS)
vs. Gate Resistance
V
DS
TYPICAL PERFORMANCE CURVES
−2
= 0 V
−V
GS
10
0.01
100
0.1
0
10
−V
1
V
0.1
GS
DS
Figure 11. Maximum Rated Forward Biased
V
SINGLE PULSE
T
= 0 V
C
2
GS
−V
= 25°C
= 8 V
DS
V
I
V
D
DD
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −1.0 A
4
= −10 V
= −4.5 V
C
R
THERMAL LIMIT
PACKAGE LIMIT
T
oss
J
DS(on)
Safe Operating Area
= 25°C
http://onsemi.com
6
1
100
LIMIT
8
4
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
(T
5
4
3
2
1
0
2
1
0
0.4
0
J
10
= 25°C unless otherwise noted)
Figure 10. Diode Forward Voltage vs. Current
Figure 8. Gate−to−Source Voltage vs. Total
V
T
Q1
−V
3
J
GS
= 25°C
SD
0.45
100 ms
10 ms
1 ms
10 ms
dc
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
6
Q
g
, TOTAL GATE CHARGE (nC)
9
Q2
0.5
100
12
Gate Charge
QT
15
0.55
18
0.6
21
I
T
D
24
J
= −7.4 A
0.65
= 25°C
27
0.7
30