ntms4101p ON Semiconductor, ntms4101p Datasheet - Page 3

• Manufacturer Part Number: ntms4101p
• Description: Trench Power Mosfet 20 V, 9.0 A, Single P Channel, So 8
• Manufacturer: ON Semiconductor

0.025
0.015
0.005
25
20
15
10
0.03
0.02
0.01
0.6
0.5
0.4
0.3
0.2
0.1
5
0
0
0
0
0
Figure 3. On−Resistance vs. Gate−to−Source
3
−V
Figure 5. On−Resistance vs. Drain Current and
V
−V
GS
1
Figure 1. On−Region Characteristics
DS
GS
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −10 V to −2.4 V
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
2
D,
7
DRAIN CURRENT (AMPS)
4
TYPICAL PERFORMANCE CURVES
3
9
Voltage
Gate Voltage
4
6
11
V
V
GS
GS
5
−2 V
−1.8 V
−1.6 V
−1.4 V
−1.2 V
13
= −2.5 V
= −4.5 V
8
I
T
D
6
J
= −1.45 A
15
= 25°C
T
J
10
= 25°C
7
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17
8
12
19
3
0.025
0.005
0.03
0.02
0.15
0.01
1.5
1.3
1.1
0.9
0.7
0.5
0.3
(T
25
20
15
10
0
5
0
−50
J
5
Figure 4. On−Resistance vs. Drain Current and
0
= 25°C unless otherwise noted)
V
V
GS
GS
−25
Figure 6. On−Resistance Variation with
−V
= −4 V
= −4.5 V
GS
Figure 2. Transfer Characteristics
0.5
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
−I
J
10
, JUNCTION TEMPERATURE (°C)
D,
0
DRAIN CURRENT (AMPS)
Temperature
25
25°C
Temperature
1
T
T
T
J
J
J
50
125°C
15
= 100°C
= 25°C
= −55°C
1.5
75
T
J
= −55°C
100
20
2
125
150
2.5
25