ntms10p02 ON Semiconductor, ntms10p02 Datasheet

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ntms10p02

Manufacturer Part Number
ntms10p02
Description
Power Mosfet 20 V, 10 A, P-channel Enhancement - Mode Single So-8 Package
Manufacturer
ON Semiconductor
Datasheet

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NTMS10P02R2
Power MOSFET
−10 Amps, −20 Volts
P−Channel Enhancement−Mode
Single SOIC−8 Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2″ square FR−4 Board
2. Mounted onto a 2″ square FR−4 Board
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Thermal Resistance −
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche En-
ergy − Starting T
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
Ultra Low R
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOIC−8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SOIC−8 Mounting Information Provided
Pb−Free Package is Available
Power Management in Portable and Battery−Powered Products,
(1 in sq, Cu 0.06″ thick single sided), t = 10 seconds.
(1 in sq, Cu 0.06″ thick single sided), t = steady state.
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3)
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3)
(V
Peak I
DD
= −20 Vdc, V
L
= 5.0 Apk, L = 40 mH, R
DS(on)
J
= 25°C
Rating
GS
= −4.5 Vdc,
A
A
= 25°C
= 25°C
G
= 25 W)
Symbol
T
V
R
R
J
V
E
I
I
P
P
P
P
DSS
, T
T
DM
DM
I
I
I
I
I
I
qJA
qJA
GS
AS
D
D
D
D
D
D
D
D
D
D
L
stg
−55 to
Value
+150
"12
−8.0
−5.5
−8.8
−6.4
−4.5
−20
−10
−50
−44
500
260
2.5
0.6
1.6
0.4
50
80
1
°C/W
°C/W
Unit
Vdc
Vdc
mJ
°C
°C
W
W
W
W
A
A
A
A
A
A
A
A
†For information on tape and reel specifications,
NTMS10P02R2
NTMS10P02R2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
Device
CASE 751
STYLE 12
8
SOIC−8
14 mW @ V
E10P02 = Specific Device Code
A
Y
WW
G
ORDERING INFORMATION
1
G
−10 AMPERES
http://onsemi.com
−20 VOLTS
= Assembly Location
= Year
= Work Week
= Pb−Free Package
P−Channel
(Pb−Free)
Package
SOIC−8
SOIC−8
MARKING DIAGRAM &
Publication Order Number:
D
PIN ASSIGNMENT
GS
8
1
D
S
S
= −4.5 V
AYWW G
E10P02
2500/Tape & Reel
2500/Tape & Reel
NTMS10P02R2/D
D
S
G
Shipping
D D
S G

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ntms10p02 Summary of contents

Page 1

... SOIC−8 AYWW G CASE 751 G STYLE E10P02 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Device Package Shipping SOIC−8 2500/Tape & Reel SOIC−8 2500/Tape & Reel (Pb−Free) Publication Order Number: NTMS10P02R2/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc −250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = −20 Vdc Vdc 25° ...

Page 3

V −2 −10 V −3 5 0.25 0.50 0.75 1.00 1.25 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.100 0.075 0.050 0.025 0 0 2.0 4.0 6.0 ...

Page 4

C iss 6000 C rss 4000 2000 0 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 5.0 4.0 3.0 Q1 2.0 1 Figure 8. Gate−To−Source and Drain−To−Source 1000 V = − −1 ...

Page 5

DRAIN−TO−SOURCE DIODE CHARACTERISTICS 2 25°C J 1.6 1.2 0.8 0.4 0 0.50 0.55 0.60 −V , SOURCE−TO−DRAIN VOLTAGE (VOLTS) SD Figure 11. Diode Forward Voltage versus Current I S Figure 13. Diode Reverse ...

Page 6

... 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN 4.0 1.270 0.050 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTMS10P02R2 ...

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