ntms10p02 ON Semiconductor, ntms10p02 Datasheet - Page 5

• Manufacturer Part Number: ntms10p02
• Description: Power Mosfet 20 V, 10 A, P-channel Enhancement - Mode Single So-8 Package
• Manufacturer: ON Semiconductor

2.0
1.6
1.2
0.8
0.4
0
Figure 11. Diode Forward Voltage versus Current
0.001
0.50
0.01
1.0
0.1
10
−V
1.0E−05
V
T
GS
J
SD
= 25°C
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
= 0 V
D = 0.5
0.55
0.05
0.02
0.01
0.2
0.1
SINGLE PULSE
1.0E−04
0.60
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
1.0E−03
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 13. Diode Reverse Recovery Waveform
I
S
0.65
Figure 14. Thermal Response
t
p
1.0E−02
http://onsemi.com
t, TIME (s)
di/dt
0.70
t
a
5
Chip
1.0E−01
t
rr
t
100
b
1.0
0.1
10
I
S
0.25 I
0.0163 W
0.1
0.0307 F
V
SINGLE PULSE
T
Figure 12. Maximum Rated Forward Biased
GS
C
S
−V
= 25°C
= 2.5 V
DS
1.0E+00
0.1668 F
0.0652 W
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
Normalized to qja at 10s.
DS(on)
TIME
Safe Operating Area
1.0
0.1988 W
0.5541 F
LIMIT
1.0E+01
1.9437 F
0.6411 W
10
1.0E+02
0.9502 W
72.416 F
100 ms
1.0 ms
10 ms
dc
Ambient
1.0E+03
100