ntms10p02 ON Semiconductor, ntms10p02 Datasheet - Page 4

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ntms10p02

Manufacturer Part Number
ntms10p02
Description
Power Mosfet 20 V, 10 A, P-channel Enhancement - Mode Single So-8 Package
Manufacturer
ON Semiconductor
Datasheet

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1000
100
10
1.0
V
I
V
Figure 9. Resistive Switching Time Variation
D
DD
GS
= −1.0 A
= −10 V
= −4.5 V
R
G
versus Gate Resistance
, GATE RESISTANCE (OHMS)
10,000
8000
6000
4000
2000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
5.0
4.0
3.0
2.0
1.0
0
0
10
0
Figure 8. Gate−To−Source and Drain−To−Source
Q1
C
C
rss
iss
Q3
V
5.0
10
GS
Figure 7. Capacitance Variation
V
DS
Voltage versus Total Charge
Q
= 0 V
−V
g
, TOTAL GATE CHARGE (nC)
t
d(off)
GS
Q2
C
http://onsemi.com
t
t
t
0
d(on)
r
f
rss
20
−V
V
DS
100
DS
QT
= 0 V
5.0
4
30
1000
100
10
10
1.0
V
I
T
Figure 10. Resistive Switching Time Variation
D
40
GS
J
C
C
V
I
V
= −10 A
D
= 25°C
oss
DD
GS
iss
= −10 A
T
= −10 V
= −4.5 V
J
15
= 25°C
R
50
G
versus Gate Resistance
, GATE RESISTANCE (OHMS)
20
10
8.0
6.0
4.0
2.0
0
10
t
d(off)
t
f
t
t
d(on)
r
100

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