rk4936 ROHM Co. Ltd., rk4936 Datasheet

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rk4936

Manufacturer Part Number
rk4936
Description
Silicon N-channel Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
rk4936TB
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Switching (30V, 6A)
RK4936
1) Low Qg.
2) Low on-resistance.
3) Excellent resistance to damage from static electricity.
Silicon N-channel
MOS FET
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Total Power Dissipation(Tc=25 C)
Channel Temperature
Storage Temperature
Features
Structure
Equivalent circuit
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
Absolute maximum ratings (Ta = 25 C)
A protection diode is included between the gate
Gate Protection Diode.
Pw 10 s, Duty cycle 1%
(8)
(1)
(7)
Parameter
(2)
(6)
(3)
(5)
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
(4)
(1) Tr1
(2) Tr1
(3) Tr2
(4) Tr2
(5) Tr2
(6) Tr2
(7) Tr1
(8) Tr1
(8) (7) (6) (5)
(1) (2) (3) (4)
Source
Gate
Source
Gate
Drain
Drain
Drain
Drain
Symbol
V
V
Tstg
I
Tch
I
I
I
P
DRP
sp
GSS
I
DSS
DP
DR
I
D
s
D
55~ 150
Limits
150
1.3
5.2
30
24
24
20
6
6
2
External dimensions (Units : mm)
Unit
ROHM : SOP8
W
V
V
A
A
A
A
A
A
C
C
( 5 )
( 8 )
3.9 0.15
6.0 0.3
0.5 0.1
Each lead has same dimensions
Max.1.75
( 4 )
( 1 )
1.5 0.1
0.15
RK4936

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rk4936 Summary of contents

Page 1

... Duty cycle 1% External dimensions (Units : mm) ROHM : SOP8 Symbol Limits Unit DSS GSS DRP Tch 150 C Tstg 55~ 150 C RK4936 Max.1. 0.15 3.9 0.15 1.5 0.1 6.0 0.3 0.5 0.1 Each lead has same dimensions ...

Page 2

... Min. Typ. Max. Unit 1.5 V 140 ns 140 nC rr RK4936 Test Conditions V = 20V =1mA =30V =10V, I =1mA =6A, V =10V =6A, V =4. =6A, V =4V ...

Page 3

... Ta=25 C f=1MHz V =0V GS Pulsed 1000 C iss C oss 100 C rss 10 0 (V) DRAIN-SOURCE VOLTAGE : V DS Fig.8 Typical Capacitance vs. Drain-Source Voltage RK4936 1 Ta=125 C 0 0.01 0.001 10 0.1 1 (A) DRAIN CURRENT : I D Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ) 0.100 0.080 0.060 I = ...

Page 4

... PULSE WIDTH : PW Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width = =4. =3. =2. (V) DRAIN-SOURCE VOLTAGE : V DS Fig.11 Typical Output Characteristics (t)=r(t) th(ch-c) =6. 100 RK4936 10 ...

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