rk4936 ROHM Co. Ltd., rk4936 Datasheet - Page 3

• Manufacturer Part Number: rk4936
• Description: Silicon N-channel Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
Electrical characteristic curves
0.01
4.000
3.000
2.000
1.000
0.000
0.1
Fig.1 Reverse Drein Current
10
0.001
0.01
Fig.7 Gate Threshold Voltage
1
0.0
0.1
50
1
0.1
Ta=125 C
Fig.4 Static Drain-Source
CHANNEL TEMPERATURE : T ch ( C)
SOURCE - DRAIN VOLTAGE : V
25
vs. Source-Drain Voltage
Ta=125 C
vs. Channel Temperature
75 C
25 C
25 C
0
75 C
25 C
25 C
On-State Resistance
vs. Drain Current (
DRAIN CURRENT : I
0.5
25
50
1
75
1.0
100 125 150
D
V
V
I
Pulsed
Pulsed
D
(A)
V
Pulsed
DS
DS
= 1mA
GS
GS
= 0V
= 10V
(V)
= 4V
)
1.5
10
10000
1000
Fig.2 Forward Transfer Admittance
100
0.01
100
10
0.1
Fig.8 Typical Capacitance
10
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.1
1
0.01
50
Fig.5 Static Drain-Source
DRAIN-SOURCE VOLTAGE : V
vs. Drain Current
V
I
Pulsed
D
CHANNEL TEMPERATURE : Tch ( C)
Ta= 25 C
GS
=6A
vs. Drain-Source Voltage
25
=10V
125 C
DRAIN CURRENT : I
25 C
75 C
On-State Resistance vs.
Channel Temperature
0
0.1
1
25
50
10
75 100 125 150
1
D
(A)
Ta=25 C
V
Pulsed
V
Pulsed
f=1MHz
GS
DS
DS
= 10V
=0V
(V)
C
C
C
iss
oss
rss
100
10
30
25
20
15
10
5
0
Fig.9 Dynamic Input Characteristics
0
0.001
0.100
0.080
0.060
0.040
0.020
0.000
0.01
0.1
1
TOTAL GATE CHARGE : Qg (
0.1
0
Fig.3 Static Drain-Source
V
DS
Fig.6 Static Drain-Source
Ta=125 C
2
GATE-SOURCE VOLTAGE : V
8
75 C
25 C
25 C
On-State Resistance
vs. Drain Current ( )
4
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
I
D
6
=6A
3A
16
8
10 12 14 16 18 20
1
RK4936
24
V
Ta=25 C
V
I
Pulsed
D
nC)
GS
DD
=6A
D
(A)
=24V
V
Pulsed
Ta=25 C
Pulsed
GS
GS
= 10V
(V)
32
15
10
5
0
10