msm5416282 Oki Semiconductor, msm5416282 Datasheet

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msm5416282

Manufacturer Part Number
msm5416282
Description
Msm5416282256k X 16 Vram Fpm 2we
Manufacturer
Oki Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
MSM5416282
Manufacturer:
OKI
Quantity:
5 000
FEDS5416282-05
¡ Semiconductor
MSM5416282
262,144-Word ¥ 16-Bit Multiport DRAM
DESCRIPTION
The MSM5416282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
asynchronously.
It supports three types of operations: random access to RAM port, high speed serial access to
SAM port, and bidirectional transfer of data between any selected row in the RAM port and the
SAM port. In addition to the conventional multiport DRAM operating modes, the MSM5416282
features block write and flash write functions on the RAM port, and a split data transfer
capability on the SAM port. The SAM port requires no refresh operation because it uses static
CMOS flip-flops.
FEATURES
• Single power supply: 5 V 10%
• Full TTL compatibility
• Multiport organization
• Fast page mode
• Write per bit
• Byte write
• Masked flash write
• Masked block write (8 columns)
• Package:
PRODUCT FAMILY
MSM5416282-50
MSM5416282-60
MSM5416282-70
RAM : 256K word ¥ 16 bits
SAM : 512 word ¥ 16 bits
64-pin 525 mil plastic SSOP
Family
RAM
Access Time
50 ns
60 ns
70 ns
(SSOP64-P-525-0.80-K)
SAM
17 ns
18 ns
20 ns
• RAS only refresh
• CAS before RAS refresh
• Hidden refresh
• Serial read/write
• 512 tap location
• Bidirectional data transfer
• Split transfer
• Masked write transfer
• Refresh: 512 cycles/8 ms
110 ns
120 ns
140 ns
RAM
Cycle Time
SAM
20 ns
22 ns
22 ns
(Product : MSM5416282-xxGS-K)
xx indicates speed rank.
Previous version: Jan. 1998
Operating
180 mA
170 mA
160 mA
This version: Feb. 2000
Power Dissipation
Standby
8 mA
8 mA
8 mA
1/38

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msm5416282 Summary of contents

Page 1

... MSM5416282 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port ...

Page 2

... The same power supply voltage must be provided to every V voltage level must be provided to every 64-Pin Plastic SSOP Pin Name SC SE DSF QSF pin. SS FEDS5416282-05 MSM5416282 SDQ15 61 DQ15 60 SDQ14 59 DQ14 SDQ13 56 DQ13 55 SDQ12 54 ...

Page 3

Column Address Column Decoder Buffer Sense Amp. Row 512 ¥ 512 ¥ 16 Address RAM ARRAY Buffer Refresh Gate Counter SAM Serial Decoder SAM SAM Address Address Counter Buffer SAM Stop Control Block Write Column Mask Control ...

Page 4

... £ V £ All other pins not LI under test = £ V £ 5.5 V OUT I LO Output Disable FEDS5416282-05 MSM5416282 (Note: 1) Rating Unit –1 °C –55 to 150 °C (Ta = 0°C to 70°C) (Note: 2) Max. Unit 5 ...

Page 5

... CC5 Standby I CC6 Active I A CC6 Standby I CC7 Active I A CC7 Standby I CC8 Active I A CC8 FEDS5416282-05 MSM5416282 ( ±10 0°C to 70°C) CC -50 -60 -70 Unit Note Max. Max. Max. 140 130 120 3, 4 180 170 160 ...

Page 6

... WCH t 40 — 50 — 55 WCR t 8 — 10 — — — RWL t 12 — 15 — 20 CWL FEDS5416282-05 MSM5416282 -70 Unit Note Max. — ns — ns — ns — — ...

Page 7

... TLS t 10 10k 10 10k 10 TLH t 40 10k 50 10k 60 RTH t 20 — 20 — 25 ATH t 15 — 15 — 20 CTH FEDS5416282-05 MSM5416282 -70 Unit Note Max. 0 — — — ns — — — — — — ...

Page 8

... SZS t 0 — 0 — SWS t 8 — 10 — 10 SWH t 0 — 0 — SWIS t 8 — 10 — 10 SWIH FEDS5416282-05 MSM5416282 -70 Unit Note Max. — ns — ns — ns — ns — — ns — ns — — — — ns ...

Page 9

... AWD (Max.) limit ensures that t RCD (Max.) limit ensures that t RAD RAD SOH COH SCA FEDS5416282-05 MSM5416282 and (Min.), t t RWD RWD CWD CWD (Max.) can be met. RAC is greater than the specified RCD ...

Page 10

... DQ0 - 7 Open DQ8 - THS THH TRG RAS   t CSH t RSH t CAS t RAL t t ASC CAH Column t t FSC CFH t RCS t CAC t AA Valid Data t RAC Valid Data t ROH t OEA FEDS5416282-05 MSM5416282 RRH t RCH t OFF t OEZ "H" or "L" 10/38 ...

Page 11

... FSC CFH t RCS t t RCS RCH   t t CAC CAC OFF Valid Data t RAC t CPA Valid Data t OEA FEDS5416282-05 MSM5416282 RSH t t CAS CP CAS t RAL t t ASC CAH Column t t FSC CFH t t RCH RCS t t RRH RCH t CAC ...

Page 12

... Column 0 ( Column 1 ( Column 2 ( Column 3 ( Column 4 ( Column 5 ( Column 6 ( Column 7 ( FEDS5416282-05 MSM5416282 Function Low : Mask High : No Mask Low : Mask High : No Mask 12/38 ...

Page 13

... DQ8 - THS THH TRG RAS  t CSH t RSH t CAS t RAL t t ASC CAH Column t FHR t t FSC CFH B t CWL     t RWL WCS WCH t DHR DHR FEDS5416282-05 MSM5416282 t RP "H" or "L" 13/38 ...

Page 14

... D t THS TRG RAS  t CSH t RSH t CAS t RAL t t ASC CAH Column t FHR t t FSC CFH B t CWL     t t RCS RWL WCR t RCS t DHR DHR OEH FEDS5416282-05 MSM5416282 t RP "H" or "L" 14/38 ...

Page 15

... RSH t CAS t RAL t t ASC CAH Column t AWD t t FSC CFH B t CWL     RCS CWD RWL RWD t RCS t CAC t RAC Valid E Data Valid E Data OEZ OEA OEH FEDS5416282-05 MSM5416282 t RP "H" or "L" 15/38 ...

Page 16

... CFH CWL CWL WCS WCH WCH    FEDS5416282-05 MSM5416282 RSH CAS t RAL  t t ASC CAH Column t t FSC CFH B t CWL WCS WCH  ...

Page 17

... CWD CWD t t CAC CAC Out In Out In Out In Out OEZ OEZ t t OEA OEA FEDS5416282-05 MSM5416282 RSH CAS t RAL   t t ASC CAH Column t t FSC CFH B t CWL t AWD CWD t CAC t t ...

Page 18

... Semiconductor RAS Only Refresh Cycle       RAS t CRP CAS t t ASR RAH Address Row t t FSR RFH DSF    WEL/U DQ0 - THS THH TRG RAS t RPC  Open FEDS5416282-05 MSM5416282 t RP "H" or "L" 18/38 ...

Page 19

... Semiconductor CAS before RAS Refresh Cycle t RP     RAS t t RPC CSR CAS Address DSF    WEL/U t OFF DQ0 - 15 TRG RAS t CHR Inhibit Falling Transition  Open FEDS5416282-05 MSM5416282 RPC "H" or "L" 19/38 ...

Page 20

... RFH DSF    WEL/U Open DQ0 - THS THH TRG RAS RSH t RAL t t ASC CAH Column t FHR t t FSC CFH    t RCS t RRH t CAC RAC t OEA FEDS5416282-05 MSM5416282 t RAS t CHR t OFF Valid Data t OEZ "H" or "L" 20/38 ...

Page 21

... RC t RAS  t CSH t RSH t CAS t RAL t t ASC CAH SAM Start      t ASD t CSD Open t RSD TSD t SCP Note 2 t SZS t TQD t CQD Note 3 FEDS5416282-05 MSM5416282 TRP t SCC SCA t t SCA SOH Data Out Note 3 "H" or "L" 21/38 ...

Page 22

... QSF = "H"-- Upper SAM (256 - 511) is active RAS  t CSH t RSH t CAS t RAL t t ASC CAH SAM Start      t CTH t ATH Open RTH t t TSL TSD Data Out Data Out t TQD Note 2 FEDS5416282-05 MSM5416282 TRP t SCA t SOH Data Out Note 2 "H" or "L" 22/38 ...

Page 23

... RSH t CAS t RAL t t ASC CAH SAM Start Sj  t CTH t ATH Open t RTH t SCC t t SCP STOP SCA t SOH Data Out Data Out Note 2 FEDS5416282-05 MSM5416282 t RP STOP Data Out Data Out t SQD Note 2 "H" or "L" 23/38 ...

Page 24

... QSF = "H"-- Upper SAM (256 - 511) is active RAS  t CSH t RSH t CAS t RAL t t ASC CAH SAM Start    t CSD Open t RSD t SCP Note 2 t SDS Data In t SDD t CQD Note 3 FEDS5416282-05 MSM5416282 SCC SDH SDS SDH Data In Note 3 "H" or "L" 24/38 ...

Page 25

... CSH t RSH t CAS t RAL t t ASC CAH SAM Start Sj  t CTH t ATH Open t RTH t SCC t t SCP STOP SDS SDH SDH Data In Data In Note 2 FEDS5416282-05 MSM5416282 t RP STOP Data In Data In t SQD Note 2 "H" or "L" 25/38 ...

Page 26

... SC t SDS SDQ0 - 15 Data In Data In t SEP t SCC SCP t t SEA SOH Data t SEP SWIS SWH SWIH t SDH FEDS5416282-05 MSM5416282 t SCA SCA t SOH Data Out Data Out   t SWS t SDS t t SZE SDH Data In Data In "H" or "L" 26/38 ...

Page 27

... PIN FUNCTIONS Address Input The 18 address bits decode 16 bits of the 4,194,304 locations in the MSM5416282 memory array. The address bits are multiplexed to 9 address input pins (A0 - A8) as standard DRAM. 9 row address bits are latched at the falling edge of RAS. The following 9 column address bits are latched at the falling edge of CAS ...

Page 28

... Serial input/output mode is determined by the most recent read or write transfer cycle. When a read transfer cycle is performed, the SAM port is in the output mode. When a write or pseudo write transfer cycle is performed, the SAM port is switched from output mode to input mode. FEDS5416282-05 MSM5416282 28/38 ...

Page 29

... OPERATION MODES Table-1 shows the function truth table for a listing of all available RAM ports, and transfer operations of the MSM5416282. The RAM port and data transfer operations are determined by the state of CAS, TRG, WEL, WEU and DSF at the falling edge of RAS, and by the level of DSF at the falling edge of CAS. ...

Page 30

... RAS. When the mask data is low, writing is inhibited into the RAM and the mask data is high, data is written into the RAM. This mask data is in effect during the RAS cycle. In page mode cycle the mask data is retained during page access. FEDS5416282-05 MSM5416282 30/38 ...

Page 31

... Semiconductor Load/Read Color Register: RAS falling edge --- CAS = TRG = WEL = WEU = DSF = "H" The MSM5416282 is provided with an on-chip 16-bit color register for use during the flash write or block write operation. Each bit of the color register corresponds to one of the DRAM I/O blocks ...

Page 32

... Column ¥ (Upper Byte Note : Location "*" can not be loaded. Example of Block Write FEDS5416282-05 MSM5416282 Bit 15 01110011 01101011 00111100 * * * * * * * * * * * * 32/38 ...

Page 33

... SAM pointer moves to the TAP location selected for the second split SAM to shift data in or out sequentially, starts from this TAP location at the most significant bit (511 or 255), and finally wraps around to the least significant bit. TAP TAP 255 256 257 FEDS5416282-05 MSM5416282 511 33/38 ...

Page 34

... Semiconductor DATA TRANSFER OPERATIONS The MSM5416282 features two types of bidirectional data transfer capability between RAM and SAM. 1) Conventional (non split) transfer: 512 words by 16 bits of data can be loaded from RAM to SAM (Read transfer), or from SAM to RAM (Write transfer). 2) Split transfer: 256 words by 16 bits of data can be loaded from the lower/upper half of the RAM to the lower/upper half of the SAM (Split read transfer), or from the lower/upper half of SAM to the lower/upper half of RAM (Split write transfer) ...

Page 35

... AX8). WEL or WEU = "L" during the RAS cycle. A rising edge of the from the falling edge of the CAS, at which time CSD FEDS5416282-05 MSM5416282 from the rising SCA or V after the and t ...

Page 36

... Semiconductor Split Data Transfer and QSF The MSM5416282 features a bidirectional split data transfer capability between the RAM and SAM. During split data transfer operation, the serial register is split into two halves which can be controlled independently. Split read or split write transfer operation can be performed to or from one half of the serial register, while serial data can be shifted into or out of the other half of the serial register ...

Page 37

... Therefore, before you perform reflow mounting, contact Oki’s responsible sales person on the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). FEDS5416282-05 MSM5416282 (Unit : mm) Package material Epoxy resin Lead frame material ...

Page 38

NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-to-date. 2. The outline of action and examples for application ...

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