mch6618 Sanyo Semiconductor Corporation, mch6618 Datasheet

mch6618

Manufacturer Part Number

mch6618

Description

N-channel And P-channel Silicon Mosfets

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH6618.pdf (7 pages)

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Ordering number : EN6973A

MCH6618

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : FS

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[N-channel]

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Composite type with an N-channel and a P-channel MOSFET, allowing high-density mounting.

Low ON-resistance.

Ultrahigh switching speed.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V GSS

V DSS

t d (on)

t d (off)

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

yfs

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications

I D

t r

t f

SANYO Semiconductors

I D =1mA, V GS =0V

V DS =30V, V GS =0V

V GS = 8V, V DS =0V

V DS =10V, I D =100 A

V DS =10V, I D =80mA

I D =80mA, V GS =4V

I D =40mA, V GS =2.5V

I D =10mA, V GS =1.5V

V DS =10V, f=1MHz

See specified Test Circuit.

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

MCH6618

70306 / 52506PE MS IM TB-00002275 / 73001 TS IM TA-3264

Conditions

0.8mm)1unit

DATA SHEET

N-channel

min

150

0.4

0.35

--55 to +150

1.4

Ratings

150

0.8

typ

220

155

120

2.9

3.7

6.4

7.0

5.9

2.3

P-channel

Continued on next page.

max

--0.14

--0.56

- -50

12.8

1.3

3.7

5.2

No.6973-1/7

Unit

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