mch6619 Sanyo Semiconductor Corporation, mch6619 Datasheet

mch6619

Manufacturer Part Number

mch6619

Description

P-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH6619.pdf (4 pages)

Current page: 1 of 4
Download datasheet (29Kb)

Ordering number : ENN7156

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : FT

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

Composite type with 2 MOSFETs contained in a single

package, facilitaing high-density mounting.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V DSS

V GSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =--1mA, V GS =0

V DS =- -30V, V GS =0

V GS = 16V, V DS =0

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =--500mA

I D =--500mA, V GS =--10V

I D =--300mA, V GS =--4V

MCH6619

Conditions

Package Dimensions

unit : mm

2173A

Conditions

(Bottom view)

0.65

2.0

0.8mm)1unit

0.3

[MCH6619]

min

P-Channel Silicon MOSFET

0.57

--1.2

--30

41002 TS IM TA-3488

(Top view)

Ratings

0.15

typ

Ratings

0.82

420

720

MCH6619

--55 to +150

Continued on next page.

1 : Source1

2 : Gate1

3 : Drain2

4 : Source2

5 : Gate2

6 : Drain1

SANYO : MCPH6

max

--1.0

--4.0

1000

150

- -30

--2.6

0.8

550

--1

No.7156-1/4

Unit

Related parts for mch6619

mch6619 Summary of contents

Page 1

... I DSS -30V GSS 16V (off -10V =--1mA yfs -10V =--500mA R DS (on =--500mA =--10V R DS (on =--300mA =--4V P-Channel Silicon MOSFET MCH6619 [MCH6619] 0 Source1 Gate1 2 ...

... IT03312 Ratings min typ max 2.6 0.5 0.5 --0.89 --1 --15V --10V --500mA = OUT PW= MCH6619 P --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage (on --40 -- 100 120 Ambient Temperature Unit ...

Page 3

... Drain Current -- --10V --1.0A --8 --6 --4 -- 0.5 1.0 1.5 2.0 Total Gate Charge 1.0 0.8 0.6 0.4 0 100 Ambient Temperature MCH6619 --10V 3 2 --1 --0 --0.01 7 --1 IT03314 100 --1.0 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice. MCH6619 PS No.7156-4/4 ...

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mch6619 Sanyo Semiconductor Corporation, mch6619 Datasheet

mch6619

Related parts for mch6619

mch6619 Summary of contents

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