Ordering number : ENA1239
MCH6653
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : XE
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
•
•
1.5V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V GSS
V DSS
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
⏐ yfs ⏐
I DSS
I GSS
Tstg
I DP
Tch
P D
I D
SANYO Semiconductors
I D =- -1mA, V GS =0V
V DS =- -60V, V GS =0V
V GS =±8V, V DS =0V
V DS =- -10V, I D =--100μA
V DS =- -10V, I D =--50mA
I D =- -50mA, V GS =- -4V
I D =- -30mA, V GS =- -2.5V
I D =- -10mA, V GS =- -1.5V
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
MCH6653
Conditions
Conditions
2
✕0.8mm) 1unit
DATA SHEET
61108PE TI IM TC-00001408
min
--0.4
130
--60
Ratings
typ
Ratings
220
6.5
7.4
10
--55 to +150
Continued on next page.
max
--100
--400
150
±10
--60
--1.4
0.6
±10
8.5
20
No. A1239-1/4
11
--1
Unit
Unit
mS
μA
μA
mA
mA
Ω
Ω
Ω
°C
°C
V
V
W
V
V