ech8661 Sanyo Semiconductor Corporation, ech8661 Datasheet
ech8661
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ech8661 Summary of contents
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... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View ECH8661 SANYO Semiconductors N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm ...
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... Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage ECH8661 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS V GS =±16V =0V ...
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... Ta=25° --60 --40 --20 IT13725 --15V --2. =6Ω OUT G ECH8661 50Ω 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage (on 100 Ambient Temperature ° C No. A1777-3/6 [Nch =10V 4 ...
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... Total Gate Charge --3.0 --2.5 --2.0 --1.5 --1.0 --0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage ECH8661 [Nch =10V 0.3 0.4 10 IT13727 [Nch] 2 1000 100 7 ...
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... Drain Current -- --10V -- --5.5A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge ECH8661 [Pch] 100 Ta=25° --12 --14 --16 --60 --40 --20 IT15727 [Pch --10V -- --1 ...
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... Ambient Temperature °C Note on usage : Since the ECH8661 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...