hat2166h05 Renesas Electronics Corporation., hat2166h05 Datasheet - Page 4

• Manufacturer Part Number: hat2166h05
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2166H
Rev.6.00 Sep 20, 2005 page 4 of 7
100
Static Drain to Source on State Resistance
50
20
10
-25
50
40
30
20
10
8
6
4
2
0
0.1
0
V
Pulse Test
Reverse Drain Current
I
D
DS
V
Case Temperature
Dynamic Input Characteristics
= 45 A
GS
0.3
Body-Drain Diode Reverse
0
10 V
Gate Charge
20
= 4.5 V
25
V
vs. Temperature
Recovery Time
DD
1
I
D
= 25 V
40
= 10 A, 20 A
50
10 V
V
di / dt = 100 A / s
V
5 V
DD
GS
3
75
10 A, 20 A, 50 A
= 25 V
= 0, Ta = 25 C
60
10 V
Qg (nc)
5 V
10
100 125 150
Tc
I
80
DR
30
50 A
V
( C)
GS
(A)
100
100
20
16
12
8
4
0
10000
1000
3000
1000
1000
300
100
300
100
300
100
0.3
0.1
30
10
30
10
30
10
3
1
0.1 0.2
3
0.1
0
Drain to Source Voltage V
t d(on)
t r
Forward Transfer Admittance vs.
Tc = -25 C
0.3
5
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
0.5
Drain Current
Drain Current I
10
V
Rg = 4.7 , duty
1
Drain Current
t f
1
GS
25 C
= 10 V, V
15
3
2
t d(off)
5
10
20
10
I
75 C
V
Pulse Test
DS
D
D
DS
V
f = 1 MHz
= 10 V
(A)
20
(A)
= 10 V
GS
1 %
30
DS
25
= 0
Coss
Ciss
Crss
50
(V)
100
100
30