hat2164h05 Renesas Electronics Corporation., hat2164h05 Datasheet - Page 3

• Manufacturer Part Number: hat2164h05
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2164H
Main Characteristics
Rev.5.00 Sep 26, 2005 page 3 of 7
100
250
200
150
100
50
40
30
20
10
80
60
40
20
0
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4 V
10 V
Gate to Source Voltage
4
2
50
Pulse Test
4
8
100
12
6
Pulse Test
Tc (°C)
150
I
D
V
V
16
8
= 50 A
GS
DS
3.2 V
3.0 V
2.8 V
2.6 V
10 A
20 A
(V)
(V)
200
10
20
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
80
60
40
20
10
1
5
2
1
0
0.1
1
Drain to Source Voltage
Gate to Source Voltage
Operation in
this area is
limited by R
Pulse Test
V
Pulse Test
Tc = 25°C
1 shot Pulse
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
0.3
= 10 V
3
Tc = 75°C
Drain Current
1
vs. Drain Current
10
1
DS(on)
2
30
3
3
100
V
I
10
-25°C
D
25°C
GS
(A)
V
V
= 4.5 V
300
4
DS
30
GS
10 V
(V)
(V)
1000
100
5