hat2174ns Renesas Electronics Corporation., hat2174ns Datasheet - Page 4

• Manufacturer Part Number: hat2174ns
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2174N
REJ03G1685-0200 Rev.2.00 May 28, 2008
Page 4 of 7
100
100
250
200
150
100
Static Drain to Source on State Resistance
50
20
10
-25
80
60
40
20
50
0
0.1
0
50 V
V
Pulse Test
25 V
I
V
Reverse Drain Current I
D
DD
Dynamic Input Characteristics
GS
= 20 A
Case Temperature Tc (°C)
0.3
Body-Drain Diode Reverse
0
= 100 V
10 V
= 8 V
16
Gate Charge Qg (nc)
V
DD
25
V
vs. Temperature
DS
Recovery Time
= 25 V
100 V
1
50 V
32
50
di / dt = 100 A / µs
V
3
GS
75
= 0, Ta = 25°C
48
2 A, 5 A, 10 A
10
5 A, 2 A
100 125 150
I
D
DR
64
= 10 A
30
V
GS
(A)
100
80
20
16
12
8
4
0
10000
3000
1000
1000
100
300
100
300
100
0.3
0.1
30
10
30
10
30
10
3
1
0.1 0.2
0.1
3
0
Drain to Source Voltage V
t d(on)
Forward Transfer Admittance vs.
t r
0.3
Tc = -25°C
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
10
0.5
Drain Current I
Drain Current I
Drain Current
1
1
V
Rg = 4.7 Ω, duty ≤ 1 %
GS
20
t d(off)
2
25°C
= 10 V, V
3
5
30
V
Pulse Test
10
10
75°C
D
D
DS
DD
V
f = 1 MHz
(A)
(A)
20
GS
= 10 V
= 30 V
40
DS
30
t f
= 0
Coss
Ciss
Crss
50
(V)
50
100
100