hat2131r Renesas Electronics Corporation., hat2131r Datasheet

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hat2131r

Manufacturer Part Number
hat2131r
Description
Silicon N Channel Power Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HAT2131R
Manufacturer:
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25 000
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HAT2131R
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hat2131r-EL-E
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Part Number:
hat2131r-EL-E
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HAT2131R
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 1 of 6
Low on-resistance
Low drive current
High density mounting
Capable of 4 V gate drive
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
10 s, duty cycle
Item
8
7
6
5
1 2
1%
3 4
I
I
DR (pulse)
D (pulse)
Symbol
Pch
V
V
Tstg
Tch
I
GSS
I
DSS
DR
D
Note2
G
4
Note1
Note1
D
5 6
S
1
D
S
2
7
D
S
3
–55 to +150
10 s
8
D
Ratings
350
150
0.9
7.2
0.9
7.2
2.5
20
1, 2, 3
4
5, 6, 7, 8
REJ03G1815-0100
Source
Gate
Drain
Unit
Jul 17, 2009
W
V
V
A
A
A
A
C
C
(Ta = 25°C)
Rev.1.00

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hat2131r Summary of contents

Page 1

... HAT2131R Silicon N Channel Power MOS FET Power Switching Features Low on-resistance Low drive current High density mounting Capable gate drive Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage ...

Page 2

... HAT2131R Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...

Page 3

... HAT2131R Main Characteristics Maximum Safe Operation Area 100 10 1 0.1 Operation in this area is limited by R DS(on) 0. 25°C 1 shot 0.001 10 0.1 1 Drain to Source Voltage Typical Transfer Characteristics Pulse Test 75° Gate to Source Voltage Static Drain to Source on State Resistance vs ...

Page 4

... HAT2131R Body-Drain Diode Reverse Recovery Time (Typical) 1000 100 100 A / µ Reverse Drain Current I Dynamic Input Characteristics (Typical) 800 25°C 600 400 V DS 200 V = 250 V DS 100 Gate Charge Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 2 ...

Page 5

... HAT2131R 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. 10 Ω Vin 10 V REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page Normalized Transient Thermal Impedance vs. Pulse Width θch – f (t) = γ s (t) • θch – f θch – 83.3°C/ 25°C When using the glass epoxy board (FR4 40 × ...

Page 6

... P-SOP8-3.95 × 4.9-1.27 SOP-8 PRSP0008DD Index mark Ordering Information Part No. HAT2131R-EL-E 2500 pcs REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page Previous Code MASS[Typ.] FP-8DAV 0.085g Terminal cross section (Ni/Pd/Au plating Quantity Taping b p NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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