hat2114r Renesas Electronics Corporation., hat2114r Datasheet

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hat2114r

Manufacturer Part Number
hat2114r
Description
Silicon N Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HAT2114R
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hat2114rJ
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HAT2114R, HAT2114RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.1.00, Oct.06.2003, page 1 of 9
Low on-resistance
Capable of 4.5V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
2
G
SOP-8
MOS1
S
7 8
D
1
D
4
G
MOS2
8
7
6
S
5 6
D
5
3
D
1 2
3 4
1, 3
2, 4
5, 6, 7, 8 Drain
Source
Gate
(Previous ADE-208-1544(Z))
REJ03G0120-0100Z
Oct.06.2003
Rev.1.00

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hat2114r Summary of contents

Page 1

... HAT2114R, HAT2114RJ Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP MOS1 Rev.1.00, Oct.06.2003, page ...

Page 2

... HAT2114R, HAT2114RJ Absolute Maximum Ratings ( Item Symbol Drain to source voltage V DSS Gate to source voltage V GSS Drain current I D Drain peak current I (pulse) D Note4 Avalanche current I AP Note4 Avalanche energy E AR Note2 Channel dissipation Pch Note3 Channel dissipation Pch Channel temperature ...

Page 3

... HAT2114R, HAT2114RJ Electrical Characteristics ( Item Symbol Min Drain to source breakdown V voltage Gate to Source breakdown voltage V Zero gate voltage drain current I DSS Zero gate voltage HAT2114R I DSS drain current HAT2114RJ I DSS Gate to source leak current I GSS Gate to source cutoff voltage V Forward transfer admittance ...

Page 4

... HAT2114R, HAT2114RJ Main Characteristics Power vs. Temperature Derating 4.0 Test condition. When using the glass epoxy board. (FR4 1.6 mm), (PW 3.0 2.0 1 100 Case Temperature Typical Output Characteristics Drain to Source voltage Rev.1.00, Oct.06.2003, page ...

Page 5

... HAT2114R, HAT2114RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.3 0.2 0 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0. 0. Case Temperature Rev.1.00, Oct.06.2003, page Static Drain to Source on State Resistance 1.0 Pulse Test 0.5 0 ...

Page 6

... HAT2114R, HAT2114RJ Body-Drain Diode Reverse Recovery Time 1000 100 25°C 500 GS 200 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics 100 50V DD 25V 10V ...

Page 7

... HAT2114R, HAT2114RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source Drain Voltage Avalanche Test Circuit V DS Monitor Vin Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.1.00, Oct.06.2003, page Maximum Avalanche Energy vs. ...

Page 8

... HAT2114R, HAT2114RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 100 1 m Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 100 1 m Rev.1.00, Oct.06.2003, page ch-f( (t) ch-f = 125 C/ When using the glass epoxy board (FR4 40x40x1 ...

Page 9

... HAT2114R, HAT2114RJ Package Dimensions 4.90 5.3 Max 8 1 0.75 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.1.00, Oct.06.2003, page 0.10 6.10 – 0.30 + 0.67 0.60 – 0.20 0.15 0.25 M Package Code JEDEC JEITA Mass (reference value January, 2003 Unit: mm 1.08 0˚ – 8˚ FP-8DA Conforms — ...

Page 10

Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...

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