hat2116h Renesas Electronics Corporation., hat2116h Datasheet

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hat2116h

Manufacturer Part Number
hat2116h
Description
Silicon N Channel Power Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2116H
Manufacturer:
HITACHI/日立
Quantity:
20 000
Part Number:
hat2116h-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2116H
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Rev.4.00 Sep 07, 2005 page 1 of 6
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS (on)
= 6.3 m typ. (at V
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
GS
= 10 V)
5
1 2
3 4
G
4
D
S S S
5
1 2 3
(Previous: ADE-208-1575B)
1, 2, 3
4
5
REJ03G1189-0400
Source
Gate
Drain
Sep 07, 2005
Rev.4.00

Related parts for hat2116h

hat2116h Summary of contents

Page 1

... HAT2116H Silicon N Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 6.3 m typ. ( (on) GS Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) Rev.4.00 Sep 07, 2005 page ...

Page 2

... HAT2116H Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle Electrical Characteristics Item Drain to source breakdown voltage ...

Page 3

... HAT2116H Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 0.16 0.12 0.08 0. Gate to Source Voltage Rev.4.00 Sep 07, 2005 page ...

Page 4

... HAT2116H Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 – Case Temperature Body-Drain Diode Reverse Recovery Time 100 µ 0.2 0 Reverse Drain Current Dynamic Input Characteristics ...

Page 5

... HAT2116H 0.5 0.3 0.1 0.03 0.01 10 µ Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.4.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width θch – c (t) = γ s (t) • θch – c θ ...

Page 6

... JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A 1 Ordering Information Part Name HAT2116H-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page Package Name MASS[Typ.] LFPAK 0 ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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