hat2031t Renesas Electronics Corporation., hat2031t Datasheet - Page 5

• Manufacturer Part Number: hat2031t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

500
200
100
50
20
10
50
40
30
20
10
5
0.1
0
I
V
Reverse Drain Current
D
DS
0.2
Dynamic Input Characteristics
= 3.5 A
Body–Drain Diode Reverse
2
Gate Charge
V
DD
0.5
Recovery Time
= 5 V
4
10 V
20 V
di/dt = 20 A/ s
V
GS
1
= 0, Ta = 25 C
V
6
Qg (nc)
DD
2
= 20 V
I
10 V
DR
8
5 V
V
5
GS
(A)
10
10
10
8
6
4
2
0
10000
3000
1000
1000
100
500
200
100
300
30
10
50
20
10
0.1
0
V
PW = 5 s, duty < 1 %
Drain to Source Voltage V
t f
GS
0.2
10
= 4 V, V
Switching Characteristics
Crss
Typical Capacitance vs.
Drain to Source Voltage
Ciss
t
0.5
d(on)
20
DD
Coss
= 10 V
1
r t
30
2
HAT2031T
V
f = 1 MHz
GS
DS
40
t
DS
d(off)
= 0
5
(V)
50
10
5