hat2058r Renesas Electronics Corporation., hat2058r Datasheet

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hat2058r

Manufacturer Part Number
hat2058r
Description
Silicon N Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2058R
Manufacturer:
RENESAS
Quantity:
25 000
Part Number:
HAT2058R
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2058R, HAT2058RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.2.00 Sep 07, 2005 page 1 of 7
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8
7
6
5
1 2
3 4
G
2
MOS1
D
S
7 8
1
D
G
4
MOS2
D
S
5 6
3
D
1, 3
2, 4
5, 6, 7, 8
(Previous: ADE-208-934)
REJ03G1174-0200
Source
Gate
Drain
Sep 07, 2005
Rev.2.00

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hat2058r Summary of contents

Page 1

... HAT2058R, HAT2058RJ Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable gate drive Low drive current High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) ...

Page 2

... HAT2058R, HAT2058RJ Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. 1 Drive operation: When using the glass epoxy board (FR4 40 3 ...

Page 3

... HAT2058R, HAT2058RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. ...

Page 4

... HAT2058R, HAT2058RJ Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0 0 – Case Temperature Body-Drain Diode Reverse Recovery Time 1000 500 200 100 µ 0.1 0 Reverse Drain Current I Dynamic Input Characteristics 200 ...

Page 5

... HAT2058R, HAT2058RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ ...

Page 6

... HAT2058R, HAT2058RJ Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.2.00 Sep 07, 2005 page Monitor D.U Vout Monitor Vin R L Vout d(on) Avalanche Waveform V 1 DSS • ...

Page 7

... HAT2058R, HAT2058RJ Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD Index mark Ordering Information Part Name HAT2058R-EL-E 2500 pcs HAT2058RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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