hat2092r Renesas Electronics Corporation., hat2092r Datasheet

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hat2092r

Manufacturer Part Number
hat2092r
Description
Silicon N Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2092R
Manufacturer:
RENESAS
Quantity:
25 000
Part Number:
hat2092r-EL-E
Manufacturer:
RENESAS
Quantity:
277 400
Part Number:
hat2092r-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2092R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.3.00 Jan. 13, 2005 page 1 of 7
Low on-resistance
Capable of 4.5 V gate drive
Low drive current
High density mounting
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s, duty cycle
Item
SOP-8
8
7
6
5
1 2
1 %
3 4
2
G
I
D(pulse)
Pch
Pch
Symbol
MOS1
V
V
Tstg
Tch
I
GSS
I
DSS
DR
S
D
Note2
Note3
D
7 8
1
Note1
D
G
4
MOS2
S
D
5 6
3
D
–55 to +150
Ratings
±20
150
30
11
88
11
2
3
1, 3
2, 4
5, 6, 7, 8 Drain
(Previous ADE-208-1236A(Z))
Source
Gate
10s
10s
REJ03G0511-0300
Unit
°C
°C
Jan.13.2005
W
W
V
V
A
A
A
(Ta = 25°C)
Rev.3.00

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hat2092r Summary of contents

Page 1

... HAT2092R Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive Low drive current High density mounting Outline SOP Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body– ...

Page 2

... HAT2092R Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...

Page 3

... HAT2092R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage ...

Page 4

... HAT2092R Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 - Case Temperature Body–Drain Diode Reverse Recovery Time 100 50 20 di/ A/µ 0.1 0.2 0.5 1 Reverse Drain Current Dynamic Input Characteristics ...

Page 5

... HAT2092R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.1 0.01 0.001 0.0001 100 µ 10 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Rev.3.00 Jan. 13, 2005 page Reverse Drain Current vs. Source to Drain Voltage ...

Page 6

... HAT2092R Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.3.00 Jan. 13, 2005 page Switching Time Waveform Vout Monitor R L 10% Vin V DS Vout 10 td(on) 90% 10% 90% 90% td(off ...

Page 7

... Base material dimension Ordering Information Part Name HAT2092R-EL-E 2500 pcs HAT2092RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Jan. 13, 2005 page 4.90 5 ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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