hat2042t Renesas Electronics Corporation., hat2042t Datasheet - Page 3

• Manufacturer Part Number: hat2042t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

Main Characteristics
2.0
1.5
1.0
0.5
10
8
6
4
2
0
0
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Ambient Temperature
Typical Output Characteristics
10V
4 V
1
50
2
100
V
GS
3
= 1.0 V
Pulse Test
150
V
Ta ( C)
1.5 V
DS
4
(V)
200
5
0.03
0.01
100
0.3
0.1
30
10
10
3
1
8
6
4
2
0.1
0
–25 C
Note 5 :
Drain to Source Voltage
Ta = 25 C
1 shot Pulse
Gate to Source Voltage
Operation in
this area is
limited by R
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Maximum Safe Operation Area
0.3
1
1
25 C
Tc = 75 C
DS(on)
2
3
3
100 s
10 s
10
V
Pulse Test
HAT2042T
DS
V
V
GS
DS
4
30
= 10 V
(V)
(V)
100
5
3