hat2201wp-el-e Renesas Electronics Corporation., hat2201wp-el-e Datasheet - Page 4

• Manufacturer Part Number: hat2201wp-el-e
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2201WP
REJ03G1679-0300 Rev.3.00 May 27, 2008
Page 4 of 7
100
250
200
150
100
Static Drain to Source on State Resistance
100
20
50
10
80
60
40
20
50
0
-25
0.1
0
V
Pulse Test
I
Reverse Drain Current I
D
DS
V
Dynamic Input Characteristics
Case Temperature Tc (°C)
= 15 A
GS
Body–Drain Diode Reverse
0
10 V
Gate Charge Qg (nc)
= 8 V
V
8
DS
25
vs. Temperature
Recovery Time
= 100 V
1
V
50 V
25 V
16
50
DS
di/dt = 100 A/ s
V
GS
= 100 V
I
75
D
= 0, Ta = 25°C
1 A, 2 A, 5 A
50 V
25 V
24
= 1 A, 2 A, 5 A
10
100
DR
125 150
32
(A)
V
GS
100
20
16
12
8
4
0
40
10000
3000
1000
1000
300
100
100
100
0.1
30
10
10
10
1
1
0.1
0.1
0
Drain to Source Voltage V
V
f = 1 MHz
Forward Transfer Admittance vs.
GS
0.3
Switching Characteristics
= 0
Drain to Source Voltage
Typical Capacitance vs.
10
75°C
Drain Current I
Drain Current I
Drain Current
1
1
Tc = –25°C
20
V
Rg = 4.7 , duty
GS
3
25°C
= 10 V, V
30
10
10
D
D
V
Pulse Test
DS
DS
(A)
(A)
t f
t r
= 10 V
40
t d(on)
t d(off)
= 30 V
30
DS
1 %
Coss
Ciss
Crss
(V)
100
100
50